SP8K4 ROHM Co. Ltd., SP8K4 Datasheet

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SP8K4

Manufacturer Part Number
SP8K4
Description
4v Drive Nch+nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
4V Drive Nch+Nch MOSFET
SP8K4
Silicon N-channel MOSFET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
Power switching, DC / DC converter.
<It is the same ratings for the Tr1 and Tr2.>
∗MOUNTED ON A CERAMIC BOARD.
∗1 Pw 10µs, Duty cycle 1%
∗2 MOUNTED ON A CERAMIC BOARD.
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Type
SP8K4
Structure
Features
Packaging specifications
Thermal resistance
Application
Absolute maximum ratings (Ta=25°C)
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
Rth (ch-a)
TB
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
∗1
∗1
∗2
−55 to +150
Limits
Limits
62.5
±9.0
±20
±36
150
1.6
6.4
30
2
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
∗2
SOP8
Dimensions (Unit : mm)
(8)
(1)
1pin mark
∗1
(7)
(2)
°C / W
Unit
Unit
∗2
°C
°C
W
V
V
A
A
A
A
Abbreviated symbol : SP8K4
(6)
1.27
(3)
( 8 )
( 1 )
0.4
∗1
5.0
(5)
(4)
( 5 )
( 4 )
Each lead has same dimensions
(1) (2) (3) (4)
(8) (7) (6) (5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
1.75
0.2
Rev.B
SP8K4
1/3

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SP8K4 Summary of contents

Page 1

... Storage temperature ∗1 Pw 10µs, Duty cycle 1% ∗2 MOUNTED ON A CERAMIC BOARD. Thermal resistance Parameter Channel to ambient Rth (ch-a) ∗MOUNTED ON A CERAMIC BOARD. Dimensions (Unit : mm) SOP8 1pin mark Abbreviated symbol : SP8K4 Equivalent circuit (8) (7) TB ∗2 ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗ ...

Page 2

... R G ∗ − ∗ − − =5V 3 ∗ − − =9.0A 6 Min. Typ. Max. Unit ∗ − − =6.4A SP8K4 Conditions =0V DS =0V GS =0V GS =1mA D =10V GS =4.5V GS =4V GS =10V DS 15V DD 15V Conditions =0V GS Rev.B 2/3 ...

Page 3

... On-State Resistance vs. Gate-Source Voltage 1000 V GS Pulsed Ta=125°C Ta=75°C 100 Ta=25°C Ta= −25° 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) SP8K4 10 Ta=25°C =15V =15V =10V = =10Ω =10Ω Pulsed ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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