SP8M70 ROHM Co. Ltd., SP8M70 Datasheet

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SP8M70

Manufacturer Part Number
SP8M70
Description
4v Drive Nch+pch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SP8M70TB
Quantity:
2 500
Transistors
4V Drive Nch+Pch MOSFET
SP8M70
Silicon N-channel / P-channel MOSFET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Power switching, DC / DC converter.
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Type
SP8M70
Structure
Features
Packaging specifications
Application
Absolute maximum ratings (Ta=25°C)
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
TB
Symbol
V
V
Tstg
Tch
I
I
P
GSS
I
I
DSS
DP
SP
D
S
D
∗1
∗1
∗2
2.0(TOTAL) 1.4(ELEMENT)
N-ch
±3.0
250
±12
1.0
30
12
−55 to +150
Limits
150
∗A protection diode is included between the gate and
Dimensions (Unit : mm)
Equivalent circuit
∗2
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
SOP8
(8)
(1)
−250
P-ch
±2.5
−1.0
−20
±10
−10
∗1
(7)
(2)
∗2
(6)
(3)
Unit
°C
°C
W
V
V
A
A
A
A
∗1
(5)
(4)
Each lead has same dimensions
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
(1) (2) (3) (4)
(8) (7) (6) (5)
SP8M70
1/7

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SP8M70 Summary of contents

Page 1

... I 1.0 S ∗1 − ∗2 P 2.0(TOTAL) 1.4(ELEMENT) D Tch 150 −55 to +150 Tstg SP8M70 Each lead has same dimensions (6) (5) (8) (7) (6) (5) ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate ∗1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (3) (4) (6) Tr2 Drain (7) Tr1 Drain ...

Page 2

... R G ∗ − − 5 ∗ − − =10V I 2 ∗ − − =42Ω Min. Typ. Max. Unit ∗ − − =3A SP8M70 Conditions =0V DS =0V GS =0V GS =1mA D =10V GS =10V DS 125V DD 125V =3A D =10Ω G Conditions =0V GS 2/7 ...

Page 3

... V DD ∗ − − = −10V 2 ∗ =50Ω, R − − Min. Typ. Max. Unit ∗ − − −1.5 =−2.5A SP8M70 Conditions =0V DS = −1mA D = −10V GS = −10V DS −125V DD −125V −2.5A D =10Ω G Conditions =0V GS 3/7 ...

Page 4

... Fig.5 Typical Transfer Characteristics 10 V =10V GS Pulsed 1 Ta=125°C 75°C 25°C -25°C 0.1 0.1 1 Drain Current : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current SP8M70 1000 =125V =10V 100 10 Ta=25°C di/dt=100A/µs V Pulsed 1 0 Reverse Drain Current : I Fig.3 Reverse Recovery Time vs. Reverse Drain Current ...

Page 5

... D Fig.2 Switching Characteristics =-2. -1.25A 1 Ta=25°C Pulsed Gate-Source Voltage : -V GS Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage SP8M70 2 V =10V GS 1 1.6 7V 1.4 1 0.8 0.6 0 Drain-Sourse Voltage : V Fig.12 Typical Output Characteristics 15 = −125V = − ...

Page 6

... GS Pulsed 4 I =2. 1.25A -50 - 100 125 150 Temperature : Tch (°C) Fig.11 Static Drain-Source On-State Resistance vs.Channel Temperature SP8M70 =10V DS I =1mA D 0 -50 - 100 125 150 Channel Temperature : Tch: (°C) Fig.9 Gate Threshold Voltage vs ...

Page 7

... Fig. D.U. d(on) Fig.18 Switching Waveforms D.U. Fig.20 Gate Charge Waveform SP8M70 Pulse Width 90% 50% 50% 10% 10% 10% 90% 90 d(on) d(off off Fig.14 Switching Waveforms Charge Gate Charge Waveform ...

Page 8

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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