AO4601 Alpha & Omega Semiconductor, AO4601 Datasheet

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AO4601

Manufacturer Part Number
AO4601
Description
Complementary Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4601A/
Manufacturer:
AOS/万代
Quantity:
20 000
Part Number:
AO4601L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4601
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4601 uses advanced trench technology
MOSFETs to provide excellent R
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications. Standard
Product AO4601 is Pb-free (meets ROHS & Sony
259 specifications). AO4601L is a Green Product
ordering option. AO4601 and AO4601L are
S2
G2
S1
G1
A
SOIC-8
1
2
3
4
8
7
6
5
D2
D2
D1
D1
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
C
C
A
A
A
A
A
=25°C unless otherwise noted
DS(ON)
Steady-State
Steady-State
Steady-State
Steady-State
and low
t ≤ 10s
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
n-channel
G2
Features
n-channel
V
I
R
< 55mΩ (V
< 70mΩ (V
< 110mΩ (V
D
DS
Symbol
DS(ON)
= 4.7A (V
(V) = 30V
Max n-channel
R
R
R
R
θJA
θJL
θJA
θJL
-55 to 150
D2
S2
1.44
±12
GS
GS
4.7
30
30
4
2
GS
GS
=10V)
=4.5V)
=10V) -8A (V
Device
= 2.5V)
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
p-channel
G1
R
-30V
DS(ON)
p-channel
< 18mΩ (V
< 19mΩ (V
Max p-channel
GS
Typ
D1
S1
-55 to 150
52
78
48
50
73
31
= -20V)
1.44
±25
-6.9
-30
-50
-8
2
GS
GS
Max Units
62.5
62.5
110
110
= -20V)
= -10V)
60
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4601 Summary of contents

Page 1

... MOSFETs to provide excellent R gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4601 is Pb-free (meets ROHS & Sony 259 specifications). AO4601L is a Green Product ordering option. AO4601 and AO4601L are S2 ...

Page 2

MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source ...

Page 3

... AO4601 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10V (Volts) DS Fig 1: On-Region Characteristics 150 125 V =2.5V GS 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 150 100 50 25° (Volts) GS Figure 5: On-Resistance vs ...

Page 4

... AO4601 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V (nC) g Figure 7: Gate-Charge Characteristics T =150°C 100.0 J(Max) T =25°C A 10.0 R DS(ON) limited 1.0 1s 10s 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θ ...

Page 5

MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source ...

Page 6

... AO4601 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 -8V -6V -10V -5. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage =- (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd ...

Page 7

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 ...

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