AO4801A Alpha & Omega Semiconductor, AO4801A Datasheet
AO4801A
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AO4801A Summary of contents
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... AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4801A uses advanced trench technology to provide excellent R with low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. Standard Product AO4801A is Pb-free (meets ROHS & Sony 259 specifications) ...
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... AO4801A Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4801A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V -4. Figure 1: On-Region Characteristics Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 I =-5. 25° Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...
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... AO4801A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V DS I =-5. Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) 10.0 limited 1s 1.0 10s T =150°C J(Max) T =25° 0.1 0 Figure 9: Maximum Forward Biased Safe Operating Area (NoteE θJA J, =110°C/W θ ...