AO8814 Alpha & Omega Semiconductor, AO8814 Datasheet
AO8814
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AO8814 Summary of contents
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... AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8814 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 1.8V while retaining a 12V V rating ESD protected. GS(MAX) This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common- drain configuration ...
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... AO8814 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS BV Gate-Source Breakdown Voltage GSO V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance ...
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... AO8814 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V (Volts) DS Figure 1: On-Regions Characteristi =3. =4. Figure 3: On-Resistance vs. Drain Current and Gate Voltage 125° 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...
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... AO8814 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =10V DS I =7. (nC) Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) limited 10.0 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θ ...