BSO613SPVG Infineon Technologies Corporation, BSO613SPVG Datasheet
BSO613SPVG
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BSO613SPVG Summary of contents
Page 1
SIPMOS Power-Transistor Features P-Channel · · Enhancement mode Avalanche rated · rated · Type Package BSO613SPV G PG-SO 8 Maximum Ratings, Parameter Continuous drain current °C A Pulsed drain current T ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint sec. £ cooling area ; t Electrical Characteristics Parameter Static Characteristics ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance ³ DS(on)max D Input capacitance - MHz GS DS Output capacitance V = ...
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Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge -3. Gate to drain charge -3. Gate charge total V = ...
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Power Dissipation tot A BSO613SPV 2.8 W 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area ...
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Typ. output characteristic =25° parameter µs p BSO613SPV -8 2.50W tot -7.0 -6.0 -5.0 -4.0 -3.0 -2.0 -1.0 0.0 0.0 ...
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Drain-source on-state resistance DS(on) j parameter : I = -3. BSO613SPV 0.34 W 0.28 0.24 0.20 98% 0.16 typ 0.12 0.08 0.04 0.00 -60 - Typ. capacitances C = ...
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Avalanche energy para -3. - 160 mJ 120 100 105 Drain-source breakdown voltage ...
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Rev.1.3 Page 9 BSO613SPV G 2007-03-02 ...