CPH5611 Sanyo Semiconductor Corporation, CPH5611 Datasheet
CPH5611
Manufacturer Part Number
CPH5611
Description
Ultrahigh-speed Switching N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.CPH5611.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CPH5611-TL
Manufacturer:
SANYO
Quantity:
51 000
Ordering number : ENN7154
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : FR
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
•
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Composite type with 2 MOSFETs contained in a
single package, facilitaing high-density mounting.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
I GSS
I DSS
Tstg
I DP
Tch
P D
yfs
I D
Ultrahigh-Speed Switching Applications
PW 10 s, duty cycle 1%
Mounted on a ceramic board (600mm
I D =1mA, V GS =0
V DS =20V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =1.5A
I D =1.5A, V GS =4V
I D =0.7A, V GS =2.5V
CPH5611
Conditions
Package Dimensions
unit : mm
2168
Conditions
1
5
0.95
2.9
2
4
0.8mm)1unit
3
2
0.4
0.4
[CPH5611]
min
N-Channel Silicon MOSFET
0.4
3.4
20
41002 TS IM TA-3487
Ratings
typ
0.15
Ratings
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5
4.8
54
73
CPH5611
--55 to +150
Continued on next page.
0.05
max
150
0.9
102
20
10
12
1.3
70
10
3
1
No.7154-1/4
Unit
Unit
m
m
W
V
V
A
A
V
V
S
C
C
A
A
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CPH5611 Summary of contents
Page 1
... I D =1mA DSS V DS =20V GSS 8V (off =10V =1mA yfs V DS =10V =1. (on =1.5A = (on =0.7A =2.5V N-Channel Silicon MOSFET CPH5611 [CPH5611] 2 0.95 0 Drain1 2 : Drain2 3 : Gate2 4 : Source ...
Page 2
... IT04047 Ratings min typ max 280 8.8 0.85 0.85 0. =10V =1. =6.67 D PW= CPH5611 P =10V 0 0.2 0.4 0.6 0.8 1.0 1.2 Gate-to-Source Voltage (on --60 --40 -- 100 Ambient Temperature Unit pF pF ...
Page 3
... V DS =10V I D =3A 3.5 3.0 2.5 2.0 1.5 1.0 0 Total Gate Charge 1.0 0.9 0.8 0.6 0.4 0 100 Ambient Temperature CPH5611 0.2 0.3 IT03494 1000 V DD =10V 100 ...
Page 4
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2002. Specifications and information herein are subject to change without notice. CPH5611 PS No.7154-4/4 ...