ECH8401 Sanyo Semiconductor Corporation, ECH8401 Datasheet

ECH8401

Manufacturer Part Number

ECH8401

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.ECH8401.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

ECH8401-TL-E

Manufacturer:

SANYO/三洋

Quantity:

20 000

Current page: 1 of 4
Download datasheet (30Kb)

Ordering number : ENN7609

Preliminary

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : KA

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

•

Low ON-resistance.

Ultrahigh-speed switching.

2.5V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Tstg

I DP

Tch

P D

I D

Ultrahigh-Speed Switching Applications

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =1mA, V GS =0

V DS =20V, V GS =0

V GS = 8V, V DS =0

V DS =10V, I D =1mA

ECH8401

Package Dimensions

unit : mm

2222

Conditions

0.65

Conditions

Top View

0.3

2.9

0.8mm)

[ECH8401]

Bottom View

min

N-Channel Silicon MOSFET

41504 TS IM TA-100665

0.5

0.15

Ratings

typ

Ratings

ECH8401

Continued on next page.

1 : Source

2 : Source

3 : Source

4 : Gate

5 : Drain

6 : Drain

7 : Drain

8 : Drain

SANYO : ECH8

--55 to +150

max

150

1.3

1.6

No.7609-1/4

Unit

Related parts for ECH8401

ECH8401 Summary of contents

Page 1

... Tstg Symbol Conditions V (BR)DSS I D =1mA DSS V DS =20V GSS 8V (off =10V =1mA N-Channel Silicon MOSFET ECH8401 [ECH8401] 0. Source 2 : Source 3 : Source 4 : Gate Bottom View 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Ratings ...

Page 2

... See specified Test Circuit t f See specified Test Circuit =10V =10V =5A Qgs V DS =10V =10V =5A Qgd V DS =10V =10V = =10A Electrical Connection OUT ECH8401 =1. 0.7 ...

Page 3

... Drain Current =10V = Total Gate Charge ECH8401 20 Ta= --50 --25 IT04244 =10V 1 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2004. Specifications and information herein are subject to change without notice. ECH8401 120 140 160 IT04252 PS No ...

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