NTMFS4108N ON Semiconductor, NTMFS4108N Datasheet

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NTMFS4108N

Manufacturer Part Number
NTMFS4108N
Description
Power Mosfet 30 V, 35 A, Single N-channel So-8 Flat Lead Package
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4108NT
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NTMFS4108NT1
Manufacturer:
ON/安森美
Quantity:
20 000
NTMFS4108N
Power MOSFET
30 V, 35 A, Single N-Channel,
SO-8 Flat Lead Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1″ sq. pad size
2. Surface-mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 5
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Power Dissipation
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche
Energy (V
L = 1 mH, R
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Standard SO-8 Package Footprint
Board Mounting
Thermally and Electrically Enhanced Packaging Compatible with
New Package Provides Capability of Inspection and Probe After
Ultra Low R
Optimized for Low Side Synchronous Applications
High Speed Switching Capability
Notebook Computer Vcore Applications
Network Applications
DC-DC Converters
qJC
(Cu area = 1.127″ sq. [1 oz] including traces).
(Cu area = 0.412″ sq.).
(Note 1)
DD
G
= 30 V, V
= 25 W)
DS(on)
Rating
GS
(at 4.5 V
(T
t v10 s
t v10 s
= 10 V, I
Steady
Steady
Steady
J
State
State
State
= 25°C unless otherwise noted)
t
p
GS
= 10 ms
PK
), Low Gate Resistance and Low Q
T
= 30 A,
T
T
T
T
T
T
T
A
A
A
A
A
A
A
C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
Symbol
T
V
J
V
E
I
P
P
P
, T
DSS
DM
T
I
I
I
GS
AS
D
D
S
D
D
D
L
stg
-55 to
Value
$20
6.25
13.5
0.91
100
203
150
450
260
2.4
6.0
30
22
16
35
10
1
Unit
mJ
°C
°C
W
W
W
V
V
A
A
A
A
G
†For information on tape and reel specifications,
NTMFS4108NT1G
NTMFS4108NT3G
SO-8 FLAT LEAD
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
CASE 488AA
(BR)DSS
30 V
4108N = Specific Device Code
A
Y
WW
G
(Note: Microdot may be in either location)
STYLE 1
Device
ORDERING INFORMATION
G
1
= Assembly Location
= Year
= Work Week
= Pb-Free Package
http://onsemi.com
http://onsemi.com
2.7 mW @ 4.5 V
1.8 mW @ 10 V
R
DS(on)
(Pb-Free)
(Pb-Free)
SO-8 FL
SO-8 FL
Package
D
Publication Order Number:
TYP
S
S
S
S
G
1500 Tape / Reel
5000 Tape / Reel
MARKING
DIAGRAM
NTMFS4108N/D
AYWWG
4108N
Shipping
D
D
G
I
D
35 A
MAX
D
D

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NTMFS4108N Summary of contents

Page 1

... R TYP I MAX DS(on MARKING DIAGRAM 4108N S 1 AYWWG Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION † Package Shipping SO-8 FL 1500 Tape / Reel (Pb-Free) SO-8 FL 5000 Tape / Reel (Pb-Free) Publication Order Number: NTMFS4108N/D ...

Page 2

... Surface-mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127″ sq. [1 oz] including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412″ sq.). 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. NTMFS4108N Rating (T = 25°C unless otherwise noted) ...

Page 3

... GS Figure 3. On-Resistance vs. Gate-to-Source Voltage 1 1 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NTMFS4108N TYPICAL PERFORMANCE CURVES 25°C J ≥ 3 3 3 3 0.0035 0.003 T = 25° ...

Page 4

... 4 100 t d(off GATE RESISTANCE (OHMS) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 100 10 1 0.1 NTMFS4108N TYPICAL PERFORMANCE CURVES 25° Drain-To-Source Voltage vs. Total Charge ...

Page 5

... D 5.15 BSC D1 4.50 4.90 5.10 D2 3.50 --- 4.22 E 6.15 BSC E1 5.50 5.80 6.10 E2 3.45 --- 4.30 e 1.27 BSC G 0.51 0.61 0. 0.51 --- --- L 0.51 0.61 0.71 L1 0.05 0.17 0.20 M 3.00 3.40 3. --- 12 SOLDERING FOOTPRINT 1.270 0.750 4X 1.000 0.965 2X 0.905 2X 4.530 0.475 2X 1.530 4.560 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS4108N/D ...

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