NTMFS4120N ON Semiconductor, NTMFS4120N Datasheet

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NTMFS4120N

Manufacturer Part Number
NTMFS4120N
Description
Power Mosfet 30 V, 31 A, Single N-channel So-8 Flat Lead
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4120NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTMFS4120N
Power MOSFET
30 V, 31 A, Single N-Channel,
SO-8 Flat Lead
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
2. Surface mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 3
MAXIMUM RATINGS
Power Dissipation (Note 2)
THERMAL RESISTANCE MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Power Dissipation (Note 1)
Continuous Drain Current
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche Energy
Lead Temperature for Soldering Purposes
Junction-to-Case - Steady State
Junction-to-Ambient - Steady State (Note 1)
Junction-to-Ambient - t v10 s (Note 1)
Junction-to-Ambient - Steady State (Note 2)
Low R
Optimized Gate Charge
Low Inductance SO-8 Package
These are Pb-Free Devices
Notebooks, Graphics Cards
DC-DC Converters
Synchronous Rectification
(Cu area = 1.127 in sq [1 oz] including traces).
(Cu area = 1.0 in sq).
(Note 1 )
(Note 2)
(V
L = 1 mH, R
(1/8″ from case for 10 s)
DD
= 30 V, V
DS(on)
G
= 25 W)
GS
Parameter
Parameter
= 10 V, I
(T
J
= 25°C unless otherwise noted)
t v10 s
t v10 s
PK
Steady
Steady
Steady
State
State
State
= 30 A,
t
p
= 10 ms
T
T
T
T
T
T
T
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
Symbol
T
V
R
R
R
R
J
V
E
I
P
P
, T
T
DSS
DM
I
I
I
qJC
qJA
qJA
qJA
GS
AS
D
D
S
D
D
L
stg
-55 to
Value
Value
139.1
$20
55.8
150
450
260
2.2
6.9
8.0
0.9
7.0
1.7
30
18
13
31
94
18
11
1
°C/W
Unit
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
†For information on tape and reel specifications,
NTMFS4120NT1G
NTMFS4120NT3G
SO-8 FLAT LEAD
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
CASE 488AA
(BR)DSS
30 V
(Note: Microdot may be in either location)
STYLE 1
Device
4120N = Specific Device Code
A
Y
WW
G
ORDERING INFORMATION
G
1
http://onsemi.com
4.2 mW @ 4.5 V
3.5 mW @ 10 V
= Assembly Location
= Year
= Work Week
= Pb-Free Package
R
(Pb-Free)
(Pb-Free)
DS(on)
Package
SO-8 FL
SO-8 FL
D
Publication Order Number:
Typ
S
S
S
S
G
1500 Tape & Reel
5000 Tape & Reel
MARKING
DIAGRAM
NTMFS4120N/D
AYWWG
Shipping
4120N
D
D
G
(Note 1)
I
D
31 A
Max
D
D

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NTMFS4120N Summary of contents

Page 1

... Microdot may be in either location) ORDERING INFORMATION Device Package Shipping SO-8 FL 1500 Tape & Reel (Pb-Free) SO-8 FL 5000 Tape & Reel (Pb-Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMFS4120N/D Max D D † ...

Page 2

... DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. NTMFS4120N (T = 25°C unless otherwise noted) J Symbol Test Condition = 250 mA V ...

Page 3

... DRAIN CURRENT (AMPS) D, Figure 3. On-Resistance vs. Drain Current and Temperature 1 1.4 1.2 1 0.8 0.6 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NTMFS4120N TYPICAL PERFORMANCE CURVES 25°C J ≥ ...

Page 4

... SINGLE PULSE T = 25°C C 0.1 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTMFS4120N TYPICAL PERFORMANCE CURVES 25° Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge ...

Page 5

... D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1E-04 1E-03 1E-02 NTMFS4120N 1E-01 1E+00 t, TIME (seconds) Figure 13. Thermal Response http://onsemi.com 5 1E+01 1E+02 1E+03 ...

Page 6

... D 5.15 BSC D1 4.50 4.90 5.10 D2 3.50 --- 4.22 E 6.15 BSC E1 5.50 5.80 6.10 E2 3.45 --- 4.30 e 1.27 BSC G 0.51 0.61 0. 0.51 --- --- L 0.51 0.61 0.71 L1 0.05 0.17 0.20 M 3.00 3.40 3. --- 12 SOLDERING FOOTPRINT 1.270 0.750 4X 1.000 0.965 2X 0.905 2X 4.530 0.475 2X 1.530 4.560 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS4120N/D ...

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