ZVP0545G Zetex Semiconductors plc., ZVP0545G Datasheet

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ZVP0545G

Manufacturer Part Number
ZVP0545G
Description
P-channel Enhancement Mode Vertical Dmos Fet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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ZVP0545GTA
Manufacturer:
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Part Number:
ZVP0545GTA
Manufacturer:
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SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 98
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source
On-State Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
450 Volt V
R
DS(on)
=150
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
=25°C
DSS
-450
-1.5
-100
40
amb
V
I
I
V
P
SYMBOL
T
D
DM
MAX. UNIT CONDITIONS.
-4.5
20
-20
-2
150
120
20
5
10
15
15
20
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
stg
V
V
nA
mA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
I
I
V
V
V
T=125°C
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
DS
DS
DD
=-1mA, V
=-1mA, V
=-450 V, V
=-360 V, V
=-25 V, V
=-25V,I
=-25 V, V
= 20V, V
=-10V,I
-55 to +150
-25V, I
VALUE
-450
-400
-75
ZVP0545G
2
(2)
20
D
D
D
GS
DS
=-50mA
=-50mA
D
GS
GS
DS
=0V
= V
=-50mA
GS
GS
=-10V
=0V, f=1MHz
=0V
=0
=0V,
GS
G
UNIT
mA
mA
°C
W
V
V
D
S

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