SIR866DP Vishay, SIR866DP Datasheet

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SIR866DP

Manufacturer Part Number
SIR866DP
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
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SIR866DP
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TI
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Part Number:
SIR866DP-T1-GE3
Manufacturer:
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Quantity:
34 654
Part Number:
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Part Number:
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Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
g. Package Limited.
Document Number: 68751
S-81712-Rev. A, 04-Aug-08
Ordering Information: SiR866DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
20
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
0.00255 at V
0.0019 at V
6
D
PowerPAK SO-8
5
R
h
Bottom View
ttp://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
D
DS(on)
GS
GS
J
1
(Ω)
= 150 °C)
b, f
= 10 V
S
= 4.5 V
2
S
N-Channel 20-V (D-S) MOSFET
3
S
5.15 mm
4
G
I
D
60
60
(A)
g
g
d, e
a
A
= 25 °C, unless otherwise noted
Q
35.3 nC
Steady State
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• Low R
• PWM (Q
• 100 % R
• 100 % UIS Tested
• Fixed Telecom
• Low-Side dc-to-dc
• OR-ing
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
I
DM
I
AS
thJA
thJC
DS
GS
AS
D
S
D
stg
DS(on)
gd
g
Tested
®
and R
Gen III Power MOSFET
Typical
1.0
18
g
) Optimized
G
- 55 to 150
4.9
5.4
3.4
N-Channel MOSFET
Limit
39
31
± 20
260
60
60
60
20
80
40
80
83
53
b, c
b, c
b, c
b, c
b, c
g
g
g
Maximum
D
S
1.5
23
Vishay Siliconix
SiR866DP
www.vishay.com
°C/W
Unit
Unit
°C
W
mJ
V
A
RoHS
COMPLIANT
1

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SIR866DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR866DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... SiR866DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68751 S-81712-Rev. A, 04-Aug- 1.5 2.0 2.5 6000 4800 3600 2400 1200 SiR866DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SiR866DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.010 0.008 °C J 0.006 0.004 0.002 0.000 0.8 1.0 1 250 µA ...

Page 5

... Package Limited 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiR866DP Vishay Siliconix 125 150 2.5 2.0 1.5 1.0 0.5 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www ...

Page 6

... SiR866DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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