SIR474DP Vishay, SIR474DP Datasheet

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SIR474DP

Manufacturer Part Number
SIR474DP
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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350
Notes:
a. Base on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Packaged Limited.
Document Number: 68996
S-82749-Rev. A, 10-Nov-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Ordering Information: SiR474DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
8
6.15 mm
D
C
7
= 25 °C.
D
0.0095 at V
0.012 at V
6
D
PowerPAK SO-8
R
h
5
Bottom View
ttp://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
GS
GS
J
(Ω)
= 4.5 V
= 150 °C)
1
b, f
= 10 V
S
2
S
N-Channel 30-V (D-S) MOSFET
3
S
5.15 mm
I
4
D
G
(A)
20
20
a, g
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
8 nC
C
C
C
C
C
(Typ.)
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• Low Thermal Resistance PowerPAK
• Optimized
• 100 % R
• 100 % UIS Tested
• Notebook CPU Core
Symbol
Symbol
T
R
J
R
TrenchFET
Package with Low 1.07 mm Profile
Operation
- High-Side Sw
V
V
E
I
I
P
, T
I
DM
I
AS
thJA
thJC
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
for
Typical
itch
3.5
27
High-Side
- 55 to 150
3.2
3.9
2.5
Limit
15
12
± 20
29.8
19.0
260
20
20
20
30
50
20
20
b, c
b, c
b, c
b, c
b, c
g
g
g
G
Maximum
N-Channel MOSFET
4.2
Synchronous
32
Vishay Siliconix
®
SiR474DP
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
Rectifier
1

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SIR474DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR474DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... SiR474DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 68996 S-82749-Rev. A, 10-Nov- 1.5 2.0 2.5 1300 1040 = 11.1 14.8 18.5 SiR474DP Vishay Siliconix 8.0 6.4 4.8 3 ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 780 ...

Page 4

... SiR474DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.05 0. °C J 0.03 0.02 0.01 0.00 0.8 1.0 1 250 µ 100 125 ...

Page 5

... Package Limited 18.4 9.2 0 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiR474DP Vishay Siliconix 125 150 2.20 1.76 1.32 0.88 0.44 0. 100 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www ...

Page 6

... SiR474DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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