SIR406DP Vishay, SIR406DP Datasheet

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SIR406DP

Manufacturer Part Number
SIR406DP
Description
N-channel 25-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR406DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SIR406DP-T1-GE3-S
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
g. Package Limited.
Document Number: 64982
S09-1095-Rev. A, 15-Jun-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
V
Ordering Information: SiR406DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
25
(V)
8
6.15 mm
D
C
7
D
= 25 °C.
0.0048 at V
0.0038 at V
6
D
PowerPAK ® SO-8
R
5
DS(on)
Bottom View
D
GS
GS
(Ω)
J
= 4.5 V
= 10 V
= 150 °C)
1
b, f
S
2
S
N-Channel 25-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
40
40
(A)
g
g
a
d, e
A
= 25 °C, unless otherwise noted
Q
15.8 nC
Steady State
g
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
• POL
• Server
• DC/DC
Symbol
Symbol
T
R
R
J
Definition
V
V
E
I
I
P
, T
DM
thJC
I
I
AS
thJA
DS
GS
D
AS
S
D
stg
g
Tested
®
Gen III Power MOSFET
Typical
2.1
20
- 55 to 150
21.6
4.5
5.0
3.2
Limit
27
± 20
260
40
40
40
25
70
30
45
48
31
b, c
b, c
b, c
b, c
g
g
g
b, c
G
Maximum
N-Channel MOSFET
2.6
25
Vishay Siliconix
SiR406DP
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SIR406DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR406DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiR406DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 64982 S09-1095-Rev. A, 15-Jun- 2.0 2.5 2800 2240 1680 1120 560 2.0 1.7 1 1.1 0.8 0 SiR406DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... SiR406DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.024 °C J 0.018 0.012 0.006 0.000 0.8 1.0 1.2 250 200 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR406DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SiR406DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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