FQB5P10 Fairchild Semiconductor, FQB5P10 Datasheet

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FQB5P10

Manufacturer Part Number
FQB5P10
Description
Fqb5p10 / Fqi5p10 100v P-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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FQB5P10
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©2002 Fairchild Semiconductor Corporation
FQB5P10 / FQI5P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• -4.5A, -100V, R
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
I
FQI Series
2
-PAK
FQB5P10 / FQI5P10
Typ
--
--
--
DS(on)
-55 to +175
= 1.05
-3.18
-100
3.75
0.27
-4.5
-4.5
-6.0
300
-18
4.0
55
40
G
30
@V
Max
3.75
62.5
40
QFET
GS
D
S
= -10 V
Rev. B, August 2002
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
TM

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FQB5P10 Summary of contents

Page 1

... FQI Series T = 25°C unless otherwise noted C Parameter = 25° 100°C) C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° 25°C) C Parameter QFET = 1. -10 V DS(on FQB5P10 / FQI5P10 Units -100 V -4.5 A -3. -4.5 A 4.0 mJ -6.0 V/ns 3. 0.27 W/°C -55 to +175 °C 300 ° ...

Page 2

... ≤ -4.5A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions -250 -250 A, Referenced to 25°C ...

Page 3

... C oss C 350 iss 300 250 200 C rss 150 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation 1 10 175℃ 25℃ Figure 2. Transfer Characteristics ※ Note : T = 25℃ ...

Page 4

... Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2002 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = -250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms -10V -10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT -10V -10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Compliment of DUT Compliment of DUT ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2002 Fairchild Semiconductor Corporation 2 D -PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Dimensions in Millimeters Rev. B, August 2002 ...

Page 8

... Package Dimensions 9.90 1.27 0.10 2.54 TYP 10.00 ©2002 Fairchild Semiconductor Corporation (Continued -PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Rev. B, August 2002 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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