FDPF33N25 Fairchild Semiconductor, FDPF33N25 Datasheet

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FDPF33N25

Manufacturer Part Number
FDPF33N25
Description
250v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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©2007 Fairchild Semiconductor Corporation
FDP33N25 / FDPF33N25 Rev. B
FDP33N25 / FDPF33N25
250V N-Channel MOSFET
Features
• 33A, 250V, R
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• Improved dv/dt capability
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
G
D
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
= 0.094Ω @V
TO-220
FDP Series
GS
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
= 10 V
Parameter
Parameter
C
= 25°C)
G
C
C
= 25°C)
= 100°C)
D
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
FDP33N25
FDP33N25
20.4
1.89
132
235
33
0.53
62.5
0.5
-55 to +150
± 30
23.5
250
918
300
4.5
33
FDPF33N25
FDPF33N25
G
20.4*
132*
0.29
33*
37
62.5
3.4
--
UniFET
S
April 2007
D
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDPF33N25 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP33N25 / FDPF33N25 Rev. B Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... G ≤ 33A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP33N25 / FDPF33N25 Rev. B Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C oss C iss 2000 1000 C rss Drain-Source Voltage [V] DS FDP33N25 / FDPF33N25 Rev. B Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage ...

Page 4

... DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature Case Temperature [ C FDP33N25 / FDPF33N25 Rev. B (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 μ A 0.5 D 0.0 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area 10 μ ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP33N25 Figure 11-2. Transient Thermal Response Curve for FDPF33N25 FDP33N25 / FDPF33N25 Rev. B (Continued) 0 D=0.5 0.2 -1 0.1 0.05 0.02 * Notes : 0. single pulse 2. Duty Factor, D Square Wave Pulse Duration [sec] 1 D=0.5 0 0.2 0.1 0. ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP33N25 / FDPF33N25 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP33N25 / FDPF33N25 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP33N25 / FDPF33N25 Rev. B TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP33N25 / FDPF33N25 Rev. B (Continued) TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP33N25 / FDPF33N25 Rev. B i-Lo™ Power-SPM™ ® ImpliedDisconnect™ PowerTrench IntelliMAX™ Programmable Active Droop™ ® ISOPLANAR™ QFET MICROCOUPLER™ ...

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