RK7002A ROHM Co. Ltd., RK7002A Datasheet

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RK7002A

Manufacturer Part Number
RK7002A
Description
Switching 60v, 300ma
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
4V Drive Nch MOS FET
RK7002A
Silicon N-channel MOS FET transistor
1) Low on-resistance.
2) High ESD
3) High-speed switching.
4) Low-voltage drive (4V).
5) Drive circuits can be simple.
6) Parallel use is easy.
Switching
Channel to ambient
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended land.
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Type
RK7002A
With each pin mounted on the recommended land.
Features
Structure
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Rth (ch-a)
Symbol
Symbol
V
V
P
Tstg
I
I
Tch
DP
SP
GSS
I
I
D
DSS
D
S
2
1
1
Taping
T116
3000
−55 to + 150
Limits
625
Limits
±300
±20
±1.2
200
200
150
0.8
60
°C / W
External dimensions (Unit : mm)
Unit
mW
mA
mA
(1)Source
(2)Gate
(3)Drain
°C
°C
Unit
V
V
A
A
SST3
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
Abbreviated symbol : RKS
0.95
( 2 )
( 3 )
2.9
0.4
1.9
0.95
( 1 )
(2)
Each lead has same dimensions
∗1
0.15
0.95
0.45
Rev.A
(3)
(1)
RK7002A
(1)
(2)
(3)
∗2
Source
Gate
Drain
1/4

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RK7002A Summary of contents

Page 1

... S ∗ 0 ∗ 200 mW D °C Tch 150 − 150 °C Tstg Limits Unit ∗ ° 625 RK7002A 2.9 0.95 0.4 0. 0.95 0.95 0.15 1.9 Each lead has same dimensions Abbreviated symbol : RKS Equivalent circuit (3) ∗2 (2) ∗1 (1) Source ∗1 ESD PROTECTION DIODE (2) (1) Gate ∗ ...

Page 2

... Min. Typ. Max. Unit ∗ − − 1 =300mA RK7002A Test Conditions =±20V =1mA =60V =10V, I =1mA =300mA, V =10V =300mA, V =4V ...

Page 3

... V GS Pulsed 0.1 Ta=125°C 75°C 25°C −25°C 0.01 0.001 1.2 0.0 0.2 0.4 0.6 0.8 1.0 (V) SOURCE-DRAIN VOLTAGE : V SD Fig.8 Reverse drain current vs. source-drain voltage ( Ι ) RK7002A 2.5 = 10V V DS =1mA I D Pulsed 2.0 1.5 1.0 0.5 0.0 −50 − 100 125 (°C) CHANNEL TEMPERATURE : Tch Fig.3 Gate threshold voltage vs. channel temperature 7 Ta=25° ...

Page 4

... DRAIN-SOURCE VOLTAGE : V DS Fig.11 Typical capacitance vs. drain-source voltage Pulse width (on Fig.14 Switching time waveforms RK7002A 1000 t f iss 100 t d (off) oss (on 100 100 (A) DRAIN CURRENT : I D Fig.12 Switching characteristics ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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