BSN20W NXP Semiconductors, BSN20W Datasheet
BSN20W
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BSN20W Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 M3D102 2000 Mar 10 ...
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... Top view MAM356 Marking code: M8- = made in Hong Kong; M8t = made in Malaysia (or Bangkok). Fig.1 Simplified outline and symbol. CONDITIONS MAX 200 amb note 1 2 Product specification BSN20W DESCRIPTION gate source drain UNIT ...
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... MHz Product specification BSN20W MIN. MAX. UNIT 300 mA 200 mW 65 +150 C 65 +150 C VALUE UNIT 625 K/W MIN. TYP. ...
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... MHz iss . oss . rss Capacitance as a function of drain-source voltage; typical values. 500 I D (mA) 400 300 200 100 Fig.5 Transfer characteristics; typical values. Product specification BSN20W MRA781 (1) (2) ( (V) MRA783 (V) ...
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... Drain-source on-state resistance as a function of gate-source voltage; typical values 1.6 1.2 0.8 0 100 DSon j ---------------------------------------- - DSon at 100 DSon = 100 mA Temperature coefficient of drain-source on-state resistance. BSN20W MDA162 (V) MRA784 (2) (1) 150 ...
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... OUTLINE VERSION IEC SOT323 2000 Mar scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC EIAJ SC- detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION Product specification BSN20W SOT323 ISSUE DATE 97-02-28 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Mar 10 7 Product specification BSN20W ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...