RJU002N06 ROHM Co. Ltd., RJU002N06 Datasheet
RJU002N06
Manufacturer Part Number
RJU002N06
Description
2.5v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet
1.RJU002N06.pdf
(3 pages)
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Part Number:
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Manufacturer:
AVAGO
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Part Number:
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Quantity:
20 000
Transistors
2.5V Drive Nch MOS FET
RJU002N06
Silicon N-channel MOS FET
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
∗ Each terminal mounted on a recommended land
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Type
RJU002N06
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
T106
3000
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
P
DSS
GSS
I
DP
D
D
∗1
∗2
∗
−55 to +150
Limits
Limits
±200
±800
625
±12
200
150
60
(1) Source
(2) Gate
(3) Drain
External dimensions (Unit : mm)
Inner circuit
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
UMT3
°C/W
Unit
Unit
mW
mA
mA
°C
°C
(2)
V
V
∗1
Abbreviated symbol : ML
0.65
( 3 )
( 2 )
1.3
2.0
0.65
(3)
(1)
0.3
( 1 )
Each lead has same dimensions
0.2
(1)
(2)
(3)
∗2
0.15
RJU002N06
0.9
0.7
Source
Gate
Drain
1/2
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RJU002N06 Summary of contents
Page 1
... DSS ± GSS ±200 ∗1 ±800 ∗2 P 200 mW D °C Tch 150 −55 to +150 °C Tstg Symbol Limits Unit ∗ °C/W Rth(ch-a) 625 RJU002N06 2.0 0.9 0.3 0.2 0 0.65 0.65 0.15 1.3 Each lead has same dimensions Abbreviated symbol : ML (3) ∗2 (1) Source ∗1 (2) Gate (3) Drain (1) 1/2 ...
Page 2
... V DD ∗ 100mA − − ∗ − − =300Ω L ∗ − − =10Ω G Min. Typ. Max. Unit − − 1 0.16A RJU002N06 Conditions =0V DS = 1mA 200mA Conditions =0V GS 2/2 ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...