RJK2511DPK Renesas Electronics Corporation., RJK2511DPK Datasheet

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RJK2511DPK

Manufacturer Part Number
RJK2511DPK
Description
Silicon N Channel Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
RJK2511DPK
Manufacturer:
RENESAS
Quantity:
12 500
RJK2511DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 1 of 6
Low on-resistance
Low leakage current
High speed switching
2. Value at Tc = 25 C
3. STch = 25 C, Tch
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
10 s, duty cycle
Item
150 C
1
2
1%
3
I
I
DR (pulse)
D (pulse)
Symbol
Pch
E
I
AP
V
V
AR
Tstg
Tch
ch-c
I
GSS
I
DSS
DR
Note3
D
Note3
Note2
G
Note1
Note1
D
S
–55 to +150
Ratings
0.625
30.2
250
200
200
200
150
65
65
22
30
1. Gate
2. Drain (Flange)
3. Source
REJ03G1486-0400
Nov 27, 2007
Unit
C/W
mJ
W
V
V
A
A
A
A
A
C
C
(Ta = 25°C)
Rev.4.00

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RJK2511DPK Summary of contents

Page 1

... RJK2511DPK Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) 1 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current ...

Page 2

... RJK2511DPK Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...

Page 3

... RJK2511DPK Main Characteristics Power vs. Temperature Derating 400 300 200 100 0 50 100 Case Temperature Tc (°C) Typical Output Characteristics 100 Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage V REJ03G1486-0400 Rev.4.00 Nov 27, 2007 ...

Page 4

... RJK2511DPK Static Drain to Source on State Resistance vs. Temperature 0 0.08 0.06 0.04 0.02 0 − Case Temperature Body-Drain Diode Reverse Recovery Time 1000 500 200 100 100 A / µ 0.1 0.3 1.0 3 Reverse Drain Current I Dynamic Input Characteristics 400 200 V DD 100 V ...

Page 5

... RJK2511DPK Reverse Drain Current vs. Source to Drain Voltage 100 0.4 0.8 1.2 Source to Drain Voltage V Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ Switching Time Test Circuit Vin Monitor D.U.T. 10 Ω Vin 10 V REJ03G1486-0400 Rev.4.00 Nov 27, 2007 Page Pulse Test 1 ...

Page 6

... RJK2511DPK Package Dimensions Package Name JEITA Package Code RENESAS Code TO-3P SC-65 PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part No. RJK2511DPK-00-T0 360 pcs REJ03G1486-0400 Rev.4.00 Nov 27, 2007 Page Previous Code MASS[Typ.] TO-3P / TO-3PV 5.0g 4.8 ± 0.2 15.6 ± 0.3 φ 3.2 ± 0.2 2.0 1.0 ± 0.2 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 Quantity Box (Tube) Unit: mm 1.5 2.8 Shipping Container ...

Page 7

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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