STN4416 Stanson Technology Co., Ltd., STN4416 Datasheet

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STN4416

Manufacturer Part Number
STN4416
Description
N Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet
1.STN4416.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
STN4416
Manufacturer:
STANSON
Quantity:
20 000
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
STN4416S8RG
Manufacturer:
ST
0
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
STN4416 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN
PIN
PIN
PIN CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
PART
PART
PART
PART MARKING
SOP-8
SOP-8
SOP-8
SOP-8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
CONFIGURATION
CONFIGURATION
CONFIGURATION
Y:
Y:
Y:
Y: Year
A:
A:
A:
A: Process
MARKING
MARKING
MARKING
Year
Year
Year Code
Process
Process
Process Code
STN4416
STN4416
STN4416
STN4416
Code
Code
Code
Y Y Y Y A A A A
Code
Code
Code
N Channel Enhancement Mode MOSFET
FEATURE
FEATURE
FEATURE
FEATURE
�
�
�
�
�
extremely low R
20V/10A, R
20V/5.6A, R
Super high density cell design for
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
STN4416
STN4416
STN4416
STN4416
Copyright © 2007, Stanson Corp.
DS(ON)
DS(ON)
@V
@V
DS(ON)
STN4416 2009. V1
GS
= 11mΩ (Typ.)
GS
= 23mΩ
= 4.5V
= 2.5V
10A

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STN4416 Summary of contents

Page 1

... DESCRIPTION DESCRIPTION DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching ...

Page 2

... N Channel Enhancement Mode MOSFET Symbol Symbol Symbol Symbol Typical Typical Typical Typical VDSS VGSS ±12 TA=25℃ ID TA=70 ℃ IDM IS TA=25℃ PD TA=70℃ TJ TSTG -55/150 RθJA Copyright © 2007, Stanson Corp. 10A Unit Unit Unit Unit 1 2.3 A 2.5 W 1.6 ℃ 150 ℃ ℃ STN4416 2009. V1 ...

Page 3

... Min Min Typ Typ Max Max Unit Unit Min Min Typ Typ Max Max Unit Unit 20 V 0.6 1 ±100 mΩ 0.8 1 5.6 nC 9.6 1250 235 pF 195 Copyright © 2007, Stanson Corp. STN4416 2009. V1 ...

Page 4

... TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4416 STN4416 STN4416 STN4416 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4416 2009. V1 10A ...

Page 5

... TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4416 STN4416 STN4416 STN4416 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4416 2009. V1 10A ...

Page 6

... PACKAGE PACKAGE OUTLINE OUTLINE SOP-8P SOP-8P PACKAGE PACKAGE OUTLINE OUTLINE SOP-8P SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4416 STN4416 STN4416 STN4416 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4416 2009. V1 10A ...

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