IPD170N04NG Infineon Technologies Corporation, IPD170N04NG Datasheet
IPD170N04NG
Related parts for IPD170N04NG
IPD170N04NG Summary of contents
Page 1
Type OptiMOS ® 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...
Page 2
Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate ...
Page 4
Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited ...
Page 5
Typ. output characteristics I =f =25 ° parameter Typ. transfer characteristics I =f |>2 ...
Page 6
Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...
Page 7
Avalanche characteristics parameter: T j(start) 100 10 100 °C 150 ° Drain-source breakdown voltage V =f BR(DSS ...
Page 8
Package Outline Footprint: Rev. 1.0 PG-TO252-3 Packaging: page 8 IPD170N04N G 2007-12-11 ...
Page 9
Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...