SPD50P03LG Infineon Technologies Corporation, SPD50P03LG Datasheet
SPD50P03LG
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SPD50P03LG Summary of contents
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OptiMOS ® -P Power-Transistor Features • P-Channel • Enhancement mode • Logic level • 175°C operating temperature • Avalanche rated • dv /dt rated • High current rating • Pb-free lead-plating, RoHS compliant Type Package SPD50P03L G PG-TO252-5 Maximum ratings, ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Drain-source on-state resistance Transconductance ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot C 160 140 120 100 Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter 200 -5 V -10 V 180 -4.5 V 160 -4 V 140 120 100 ...
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Drain-source on-state resistance DS(on -60 - Typ. capacitances C =f MHz DS GS ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 Drain-source breakdown voltage =-250 µ BR(DSS ...
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Package Outline PG-TO252-5 Rev. 1.7 page 8 SPD50P03L G 2008-02-22 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...