IRCZ34

Manufacturer Part NumberIRCZ34
DescriptionPower Mosfet Vdss=60v, Rds On =0.050ohm, Id=30a
ManufacturerInternational Rectifier Corp.
IRCZ34 datasheet
 


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HEXFET
Power MOSFET
l
Dynamic dv/dt Rating
l
Current Sense
l
175°C Operating Temperature
l
Fast Switching
l
Ease of Paralleling
l
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
Single Pulse Avalanche Energy ‚
E
AS
Peak Diode Recovery dv/dt ƒ
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or screw
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
@ 10V
GS
@ 10V
GS
0.59
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1 N•m)
Min.
Max.
0.50
PD - 9.590A
IRCZ34
V
= 60V
DSS
R
= 0.050
DS(on)
I
= 30A
D
TO-220 HexSense
Units
30
A
21
120
88
W
W/°C
±20
V
15
mJ
4.5
A
°C
Units
1.7
°C/W
62
C-7

IRCZ34 Summary of contents

  • Page 1

    ... When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. Max. @ 10V GS @ 10V GS 0.59 - 175 300 (1.6mm from case) 10 lbf•in (1.1 N•m) Min. Max. — — — 0.50 — — 9.590A IRCZ34 V = 60V DSS R = 0.050 DS(on 30A D TO-220 HexSense Units 120 88 W W/°C ± ...

  • Page 2

    ... IRCZ34 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

  • Page 3

    ... V , Drain-to-Source Voltage (Volts) DS Fig. 1 Typical Output Characteristics, T =25° Gate-to-Source Voltage (Volts) DS Fig. 3 Typical Transfer Characteristics IRCZ34 V , Drain-to-Source Voltage (Volts) DS Fig. 2 Typical Output Characteristics, T =175° Junction Temperature (°C) J Fig. 4 Normalized On-Resistance vs. Temperature C-9 ...

  • Page 4

    ... IRCZ34 V , Drain-to-Source Voltage (Volts) DS Fig. 5 Typical Capacitance vs. Drain-to- Source Voltage V , Source-to-Drain Voltage (Volts) SD Fig. 7 Typical Source-Drain Diode Forward Voltage C- Total Gate Charge (nC) G Fig. 6 Typical Gate Charge vs. Gate-to- Source Voltage V , Drain-to-Source Voltage (Volts) DS Fig. 8 Maximum Safe Operating Area ...

  • Page 5

    ... T , Case Temperature (°C) C Fig. 9 Maximum Drain Current vs. Case Temperature t , Rectiangular Pulse Duration (seconds) 1 Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case IRCZ34 Starting T , Junction Temperature (°C) J Fig. 12c Maximum Avalanche Energy vs. Drain Current C-11 ...

  • Page 6

    ... IRCZ34 T , Junction Temperature (°C) J Fig. 15 Typical HEXSense Ratio vs. Junction Temperature V , Gate-to-Source Voltage (Volts) GS Fig. 17 Typical HEXSense Ratio vs. Gate Voltage Mechanical drawings, Appendix A Part marking information, Appendix B Test Circuit diagrams, Appendix C C- Drain Current (Amps) D Fig. 16 Typical HEXSense Ratio vs. Drain Current Fig ...