IRCZ34 International Rectifier Corp., IRCZ34 Datasheet - Page 2

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IRCZ34

Manufacturer Part Number
IRCZ34
Description
Power Mosfet Vdss=60v, Rds On =0.050ohm, Id=30a
Manufacturer
International Rectifier Corp.
Datasheet

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IRCZ34
Electrical Characteristics @ T
Notes:
C-8

Source-Drain Ratings and Characteristics
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
r
C
DSS
GSS
I
I
V
t
Q
t
d(on)
d(off)
f
r
S
SM
on
rr
V
fs
D
C
(BR)DSS
GS(th)
oss
oss
DS(ON)
g
gs
gd
iss
rss
SD
rr
V
(BR)DSS
Repetitive rating; pulse width limited by
R
max. junction temperature. ( See fig. 11 )
DD
G
= 25 , I
= 25V, starting T
/ T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Current Sensing Ratio
Output Capacitance of Sensing Cells
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
= 30A. (See Figure 12)
J
= 25°C, L = 0.019mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
T
I
Pulse width
Min. Typ. Max. Units
1340 ––– 1480
Min. Typ. Max. Units
SD
––– 0.065 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1300 –––
–––
–––
–––
9.4
2.0
–––
–––
––– 0.70
–––
–––
J
60
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
30A, di/dt
–––
–––
––– 0.050
–––
–––
–––
–––
––– -100
–––
–––
–––
100
640
4.5
7.5
9.0
–––
120
–––
–––
13
29
52
96
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
4.0
230
120
25
46
11
22
1.6
1.4
300µs; duty cycle
30
200A/µs, V
V/°C
–––
nC
nH
pF
pF
nC
V
ns
V
S
A
V
V
V
R
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
V
I
R
Between lead,
6 mm (0.25 in.)
from package
and center of
die contact
V
ƒ = 1.0MHz, See Fig. 5
I
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs „
integral reverse
D
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
GS
J
J
= 30A
= 30A
= 30A, V
DD
= 25°C, I
= 25°C, I
= 12
= 1.0
= V
= 48V, V
= 0V, I
= 10V, I
= 25V, I
= 60V, V
= 20V
= 48V
= 10V, See Fig. 6 and 13 „
= 0V
= 25V
= 0V, V
= -20V
= 30V
2%.
V
GS
(BR)DSS
, I
See Fig. 10 „
D
GS
F
S
DS
D
D
D
= 250µA
GS
GS
= 30A
= 30A, V
Conditions
Conditions
= 250µA
= 18A„
= 18A
= 10V
= 25V, ƒ = 1.0MHz
= 0V, T
,
= 0V
D
= 1mA
GS
J
= 150°C
= 0V „
G
S
+L
D
)
D
S

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