FQD3N50C Fairchild Semiconductor, FQD3N50C Datasheet

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FQD3N50C

Manufacturer Part Number
FQD3N50C
Description
Fqd3n50c/fqu3n50c 500v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
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Quantity
Price
Part Number:
FQD3N50CTM
Quantity:
2 500
©2005 Fairchild Semiconductor Corporation
FQD3N50C/FQU3N50C Rev. A
FQD3N50C/FQU3N50C
500V N-Channel MOSFET
Features
• 2.5 A, 500 V, R
• Low gate charge ( typical 10 nC )
• Low Crss ( typical 8.5 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
Symbol
Symbol
J
L
DSS
GSS
AS
AR
D
θJC
θJA
θJA
, T
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
G
DS(on)
S
= 2.5 Ω @ V
D-PAK
FQD Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
D
C
Parameter
Parameter
GS
= 25°C)
= 10 V
C
C
G
= 25°C)
= 100°C)
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1
I-PAK
FQU Series
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
FQD3N50C/FQU3N50C
Typ
--
--
--
-55 to +150
0.28
± 30
500
200
300
2.5
1.5
2.5
3.5
4.5
10
35
G
Max
110
3.5
50
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
QFET
www.fairchildsemi.com
Units
Units
W/°C
V/ns
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQD3N50C Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation FQD3N50C/FQU3N50C Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... ≤ 2.5A, di/dt ≤ 200A/µs, V ≤ BV Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQD3N50C/FQU3N50C Rev. A Package Reel Size D-PAK 380mm D-PAK 380mm I-PAK - T = 25°C unless otherwise noted C Test Conditions = 250 µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 600 C iss 400 C oss 200 C rss Drain-Source Voltage [V] DS FQD3N50C/FQU3N50C Rev. A Figure 2. Transfer Characteristics Notes : 1. 250 µ s Pulse Test ° Figure 4. Body Diode Forward Voltage 0 ...

Page 4

... T = 150 ° Single Pulse - Drain-Source Voltage [ FQD3N50C/FQU3N50C Rev. A (Continued) Figure 8. On-Resistance Variation Notes : 250 µ 100 150 200 C] ° Figure 10. Maximum Drain Current 3 2 100 µ ...

Page 5

... 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FQD3N50C/FQU3N50C Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FQD3N50C/FQU3N50C Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 2.30TYP [2.30±0.20] FQD3N50C/FQU3N50C Rev. A D-PAK ±0.20 ±0.30 (0.50) ±0.10 0.76 2.30TYP [2.30±0.20] 7 ±0.10 2.30 0.50 ±0.10 ±0.10 0.50 ±0.20 1.02 ±0.20 2.30 ±0.20 6.60 (5.34) (5.04) (1.50) (2XR0.25) ±0.10 0.76 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 ±0.10 0.76 2.30TYP [2.30±0.20] FQD3N50C/FQU3N50C Rev. A (Continued) I-PAK ±0.20 ±0.20 (0.50) 2.30TYP [2.30±0.20] 8 2.30 ±0.20 ±0.10 0.50 ±0.10 0.50 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQD3N50C/FQU3N50C Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...

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