NDF10N60Z ON Semiconductor, NDF10N60Z Datasheet

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NDF10N60Z

Manufacturer Part Number
NDF10N60Z
Description
N-channel Power Mosfet 0.65 , 600 Volts
Manufacturer
ON Semiconductor
Datasheet

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NDF10N60Z, NDP10N60Z
N-Channel Power MOSFET
0.65 W, 600 Volts
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
2. Limited by maximum junction temperature
3. I
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. 1
Drain−to−Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current,
Power Dissipation (Note 1)
Gate−to−Source Voltage
Single Pulse Avalanche
ESD (HBM)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T
Peak Diode Recovery
Continuous Source
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
Operating Junction and
Storage Temperature Range
Low ON Resistance
Low Gate Charge
Zener Diode−protected Gate
100% Avalanche Tested
ROHS Compliant
This is a Pb−Free Device
Adapter (Notebook, Printer, Gaming)
LCD Panel Power
ATX Power Supplies
Lighting Ballasts
A
S
T
V
Energy, L = 6.0 mH,
I
(JESD 22−114−B)
Current (Body Diode)
D
= 25°C) (Figure 13)
A
≤ 10 A, di/dt ≤ 200 A/ms, V
GS
= 10 A
= 100°C
@ 10 V
Rating
Symbol
T
DD
V
T
V
dv/dt
V
J
V
E
I
P
DSS
T
PKG
, T
I
I
DM
ISO
I
esd
GS
AS
D
D
S
= 80% BV
D
L
stg
(T
C
NDF10N60Z
= 25°C unless otherwise noted)
DSS
4500
36
600 (Note 1)
5.7 (Note 2)
4.5 (Note 3)
36 (Note 2)
10 (Note 2)
−55 to 150
3900
±30
300
300
260
10
NDP10N60Z
125
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
V
A
NDF10N60ZG
NDP10N60ZG
Device
V
600 V
DSS
CASE 221D
CASE 221A
TO−220AB
TO−220FP
STYLE 1
STYLE 5
ORDERING INFORMATION
A
Y
WW
G
http://onsemi.com
TO−220FP
TO−220AB
Package
G (1)
= Location Code
= Year
= Work Week
= Pb−Free Package
R
DS(ON)
Publication Order Number:
Gate
NDF10N60ZG
NDP10N60ZG
0.65 Ω
MARKING
DIAGRAM
(TYP) @ 5 A
N−Channel
AYWW
In Development
Drain
D (2)
50 Units/Rail
or
NDF10N60Z/D
Shipping
Source
S (3)

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NDF10N60Z Summary of contents

Page 1

... NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • Low ON Resistance • Low Gate Charge • Zener Diode−protected Gate • 100% Avalanche Tested • ROHS Compliant • This is a Pb−Free Device Applications • Adapter (Notebook, Printer, Gaming) • LCD Panel Power • ...

Page 2

... Ω 25°C unless otherwise noted di/dt = 100 A/ms S http://onsemi.com 2 Symbol NDF10N60Z NDP10N60Z 3.4 1.0 R qJC qJA Symbol Min Typ Max BV 600 DSS / 0.6 DSS DSS 50 I ± ...

Page 3

T = 25° 7 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.80 0.75 0.70 0.65 0.60 5 ...

Page 4

... V 100 25°C C Limit DS(on) 10 100 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Safe Operating Area for NDF10N60Z http://onsemi.com 25° TOTAL GATE CHARGE (nC) g Figure 8. Gate−to−Source and = 25° ...

Page 5

... Single Pulse Simulation 0.001 0.000001 0.00001 0.0001 Figure 12. Thermal Impedance for NDF10N60Z Figure 13. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) LEADS HEATSINK 0.110″ MIN http://onsemi ...

Page 6

... L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 STYLE 5: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NDF10N60Z/D ...

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