NIF5002N ON Semiconductor, NIF5002N Datasheet

no-image

NIF5002N

Manufacturer Part Number
NIF5002N
Description
Selfprotected Fet With Temperature And Current Limit
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NIF5002NT1G
Manufacturer:
ON
Quantity:
5 000
Part Number:
NIF5002NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NIF5002NT3
Manufacturer:
ON
Quantity:
12 500
Part Number:
NIF5002NT3G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NIF5002NT3G
Manufacturer:
ON/安森美
Quantity:
20 000
NIF5002N
Self−Protected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 7
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
(R
Gate−to−Source Voltage
Continuous Drain Current
Power Dissipation
Operating Junction and Storage Temperature
Single Pulse Drain−to−Source Avalanche Energy
HDPlust devices are an advanced series of power MOSFETs
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb−Free Packages are Available
Lighting
Solenoids
Small Motors
G
DSS
(V
L = 300 mH, R
= 1.0 MW)
DD
Specified at Elevated Temperature
= 32 V, V
G(ext)
G
Rating
= 5.0 V, I
= 25 W)
(T
@ T
@ T
@ T
J
= 25°C unless otherwise noted)
PK
Preferred Device
A
A
T
= 25°C (Note 1)
= 25°C (Note 2)
= 25°C (Note 3)
= 1.0 A,
Symbol
T
V
V
J
V
E
P
DGR
, T
DSS
I
GS
AS
D
D
stg
Internally Limited
−55 to
Value
"14
150
150
1.1
1.7
8.9
42
42
1
Unit
mJ
°C
W
V
V
V
*Max current limit value is dependent on input
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Gate
Input
condition.
(Clamped)
V
(BR)DSS
42 V
(Note: Microdot may be in either location)
ESD Protection
SOURCE
A
Y
W
5002N = Specific Device Code
G
1
ORDERING INFORMATION
DRAIN
Temperature
2
GATE
R
MARKING DIAGRAM
G
3
http://onsemi.com
Limit
= Assembly Location
= Year
= Work Week
= Pb−Free Package
165 mW @ 10 V
4
R
Overvoltage
1
2
3
Protection
DS(ON)
Publication Order Number:
CASE 318E
Current
TYP
SOT−223
STYLE 3
Limit
4
DRAIN
Drain
Current
NIF5002N/D
Sense
I
Source
D
2.0 A*
MAX
M
PWR

Related parts for NIF5002N

NIF5002N Summary of contents

Page 1

... R G ESD Protection Temperature Current Current Limit Limit Sense Source 4 SOT−223 CASE 318E 1 STYLE MARKING DIAGRAM 1 GATE 4 2 DRAIN DRAIN 3 SOURCE A = Assembly Location Y = Year W = Work Week 5002N = Specific Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NIF5002N/D ...

Page 2

... Temperature Limit (Circuit Reset) ESD ELECTRICAL CHARACTERISTICS (T Electro−Static Discharge Capability 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. NIF5002N (T = 25°C unless otherwise noted) J Symbol Test Condition ...

Page 3

... Figure 3. On−Resistance vs. Gate−to−Source Voltage 2 1 1.5 1 0.5 0 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NIF5002N 4 ≥ 25° 1 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics 0 25° ...

Page 4

... ORDERING INFORMATION Device NIF5002NT1 NIF5002NT1G NIF5002NT3 NIF5002NT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NIF5002N TYPICAL PERFORMANCE CURVES SINGLE PULSE T = 25° ...

Page 5

... PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NIF5002N/D MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° ...

Related keywords