HMPSA42M DC COMPONENTS CO., LTD., HMPSA42M Datasheet
HMPSA42M
Manufacturer Part Number
HMPSA42M
Description
Npn Epitaxial Planar Transistor
Manufacturer
DC COMPONENTS CO., LTD.
Datasheet
1.HMPSA42M.pdf
(1 pages)
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Designed for use as a video output to drive color
CRT, or as a dialer circuit in electronic telephone.
1 = Emitter
2 = Base
3 = Collector
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
DISCRETE SEMICONDUCTORS
(1)
(1)
(T
Symbol
V
V
V
T
A
P
T
=25
CBO
CEO
EBO
STG
I
Symbol
V
V
V
V
C
D
J
BV
BV
BV
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
h
h
h
I
EBO
FE1
FE2
FE3
o
f
CBO
CEO
EBO
T
C)
-55 to +150
Rating
+150
300
300
800
625
Min
300
300
80
80
40
50
6
6
-
-
-
-
-
Unit
Typ
mW
mA
o
o
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
C
C
Max
0.75
0.1
0.2
0.9
1
-
-
-
-
-
-
-
.190(4.83)
.170(4.33)
(12.70)
(1.27)
.050
.500
Typ
Dimensions in inches and (millimeters)
MHz
Min
Unit
V
V
V
V
V
V
V
-
-
-
A
5
.190(4.83)
.170(4.33)
o
Typ.
3 2 1
I
I
I
V
I
I
I
I
I
I
I
I
5
C
C
E
C
C
C
C
C
C
C
C
o
EB
=10 A, I
=100 A, I
=1mA, I
=20mA, I
=100mA, I
=20mA, I
=100mA, I
=10mA, V
=100mA, V
=200mA, V
=10mA, V
Typ.
.022(0.56)
.014(0.36)
=3V, I
(2.54)
.100
(1.27)
Test Conditions
.050
Typ
C
B
C
MPSA42M
=0
=0
B
B
Typ
=0
E
CE
CE
=2mA
=2mA
B
B
=0
CE
CE
=10mA
=10mA
.148(3.76)
.132(3.36)
=10V
=20V, f=100MHz
=10V
=10V
.022(0.56)
.014(0.36)
2
2
TO-92
o
o
Typ
Typ
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