BF1205C NXP Semiconductors, BF1205C Datasheet
BF1205C
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BF1205C Summary of contents
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... Rev. 02 — 15 August 2006 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC ...
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... amplifi amplifi amplifier a 100 amplifier b 100 - Simplified outline 001aaa706 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BF1205C Max Unit - 180 2.2 2.7 pF 2.0 2 ...
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... Thermal characteristics Parameter thermal resistance from junction to soldering point Rev. 02 — 15 August 2006 BF1205C Dual N-channel dual gate MOS-FET [1] Marking code M6* Conditions Min Max - 6 ...
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... G2-S DS(a) amplifi G1-S(a) amplifi G1-S( G2 G1-S(a) DS(a) DS( G1-S(b) Figure 3). Figure 3). Rev. 02 — 15 August 2006 BF1205C Dual N-channel dual gate MOS-FET 001aac193 150 200 T (˚C) sp Min Typ 0 100 A 0 100 A 0 150 k G1 ...
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... MHz mS 400 MHz S(opt 800 MHz S(opt) Rev. 02 — 15 August 2006 BF1205C Dual N-channel dual gate MOS-FET 001aaa553 amplifi off; amplifi amplifi on; amplifi off. ...
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... 1.8 V. G1-S(a) = 1.7 V. G1-S(a) = 1.6 V. G1-S(a) = 1.5 V. G1-S(a) = 1.4 V. G1-S(a) = 1.3 V. G1-S(a) = 1.2 V. G1-S(a) = 1.1 V. G1-S( G1-S( G2-S G1-S(b) DS(b) © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BF1205C Typ Max Unit - - 105 - dB V 001aaa555 (1) (2) (3) (4) (5) (6) (7) ( ...
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... BF1205C_2 Product data sheet 001aaa556 I (a) D (mA) (1) (2) (3) ( (mA Fig 7. Drain current as a function of internal G1 Rev. 02 — 15 August 2006 BF1205C Dual N-channel dual gate MOS-FET DS(a) G2-S DS( ...
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... V; gate 1 (a) = open; DS(a) G1-S( supply voltage; typical values MHz; see DS(a) DS(b) G1-S(b) Figure 33. typical values. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BF1205C 001aaa559 (1) (2) (3) (4) (5) ( (V) G2-S 001aaa561 (V) AGC ...
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... D(a) typical values (MHz DS(a) G2-S(a) DS( mA. D(a) function of frequency: typical values. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BF1205C 001aaa564 G1-S(b) 001aaa566 (deg G1-S( ...
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... G-1S(b) amb (deg) 16.06 37.59 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BF1205C 22 Angle (deg) 1.47 2.93 5.84 8.71 11.59 14.48 17.31 20.14 22.98 25.85 28. 0.683 0.681 ...
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... Rev. 02 — 15 August 2006 Dual N-channel dual gate MOS-FET Min Typ [ MHz unw 100 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BF1205C Max Unit 2.0 2 1.3 1 ...
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... Fig 18. Output characteristics; typical values. Rev. 02 — 15 August 2006 Dual N-channel dual gate MOS-FET 1.6 V. G1-S(b) = 1.5 V. G1-S(b) = 1.4 V. G1-S(b) = 1.3 V. G1-S(b) = 1.2 V. G1-S(b) = 1.1 V. G1-S( G1-S( G2-S DS(a) G1-S(a) © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BF1205C 001aaa569 (1) (2) (3) (4) (5) ( ...
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... DS(b) G2-S DS( 150 k (connected G1(b) Figure 3. voltage (V ); typical values. GG © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BF1205C 001aaa571 (1) (2) (3) ( (mA 001aaa573 ( G1-S(a) ); see ...
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... (1) V (2) V (3) V ( Figure 3. ), Fig 24. Drain current as a function of gate 2 voltage; GG Rev. 02 — 15 August 2006 BF1205C Dual N-channel dual gate MOS-FET ...
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... Fig 26. Unwanted voltage for 1 % cross-modulation as 001aaa578 I D (mA (V) AGC = G1-S( MHz; GG Fig 28. Drain current as a function of gain reduction; Rev. 02 — 15 August 2006 BF1205C Dual N-channel dual gate MOS-FET gain reduction (dB DS(b) GG DS(a) G1-S( 150 k (connected ...
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... DS( mA. D(b) function of frequency; typical values (MHz DS(b) G2-S DS( mA. D(b) typical values. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BF1205C 001aaa582 (deg G1-S(a) 001aaa584 G1-S( ...
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... Noise data for amplifi mA; V G2-S D(b) DS(a) F min opt (dB) ratio 1.3 0.695 1.4 0.674 Rev. 02 — 15 August 2006 BF1205C Dual N-channel dual gate MOS-FET = G1-S(a) amb Angle Magnitude Angle Magnitude (deg) ratio (deg) ratio 175.93 0.0008 84 ...
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... AGC (a) 4 BF1205C 4 ( Rev. 02 — 15 August 2006 BF1205C Dual N-channel dual gate MOS-FET V DS ( 2 (b) L2 2 (b) 5V 001aaa563 V DS ( ...
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... 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-88 Rev. 02 — 15 August 2006 Dual N-channel dual gate MOS-FET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2006. All rights reserved. BF1205C SOT363 ISSUE DATE 04-11-08 06-03- ...
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... Data sheet status Product data sheet 1: replaced drawing with correct drawing 001aac193 Product data sheet Rev. 02 — 15 August 2006 BF1205C Dual N-channel dual gate MOS-FET Change notice Supersedes - BF1205C_1 (9397 750 13005 © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 02 — 15 August 2006 BF1205C Dual N-channel dual gate MOS-FET © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. BF1205C All rights reserved. Date of release: 15 August 2006 Document identifier: BF1205C_2 ...