BF869 NXP Semiconductors, BF869 Datasheet - Page 3

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BF869

Manufacturer Part Number
BF869
Description
Npn High-voltage Transistors
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
1999 Apr 12
R
R
I
I
h
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
th j-a
th j-mb
= 25 C unless otherwise specified.
re
NPN high-voltage transistors
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 25 mA; V
= 30 mA; I
= i
= 10 mA; V
c
= 0; V
3
CB
CB
EB
= 200 V
= 200 V; T
= 5 V
CONDITIONS
CE
B
CE
CE
= 5 mA
= 30 V; f = 1 MHz
= 20 V
= 10 V; f = 100 MHz 60
j
= 150 C
50
MIN.
VALUE
BF869; BF871
78
25
Product specification
10
10
50
600
2
MAX.
UNIT
K/W
K/W
nA
nA
mV
pF
MHz
UNIT
A

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