BLF2022-120 NXP Semiconductors, BLF2022-120 Datasheet - Page 2

• Manufacturer Part Number: BLF2022-120
• Description: Uhf Push-pull Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
120 W LDMOS push-pull power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2003 Mar 07
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2-tone, class-AB
V
V
I
T
T
D
SYMBOL
MODE OF OPERATION
stg
j
Typical W-CDMA performance at a supply voltage of
28 V and I
– Output power = 20 W (AV)
– Gain = 12 dB
– Efficiency = 15%
– ACPR = 42 dBc at 3.84 MHz
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range
DS
GS
UHF push-pull power LDMOS transistor
DQ
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
of 500 mA
h
= 25 C in a common source test circuit.
f
1
= 2170; f
PARAMETER
(MHz)
f
2
= 2170.1
CAUTION
V
(V)
28
DS
2
PINNING - SOT539A
(mA)
500
I
DQ
PIN
65
1
2
3
4
5
MIN.
120 (PEP)
Top view
Fig.1 Simplified outline.
(W)
P
drain 1
drain 2
gate 1
gate 2
source, connected to flange
L
65
18
+150
200
3
1
15
(dB)
MAX.
>11
G
DESCRIPTION
Preliminary specification
p
2
4
BLF2022-120
MBK880
>30
(%)
5
V
V
A
D
C
C
UNIT
(dBc)
d
im
25