SLD301V Sony Electronics, SLD301V Datasheet

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SLD301V

Manufacturer Part Number
SLD301V
Description
100mw High Power Laser Diode
Manufacturer
Sony Electronics
Datasheet
Description
diode fabricated by MOCVD.
Features
• High power
• Low operating current
Applications
• Solid state laser excitation
• Medical use
Structure
Operating Lifetime
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
• Reverse voltage
• Operating temperature Topr
• Storage temperature
Warranty
This warranty period shall be 90 days after receipt of
the product or 1,000 hours operation time whichever
is shorter.
Sony Quality Assurance Department shall analyze
any product that fails during said warranty period,
and if the analysis results show that the product
failed due to material or manufacturing defects on the
part of Sony, the product shall be replaced free of
charge.
Laser diodes naturally have differing lifetimes which
follow a Weibull distribution.
Special warranties are also available.
The SLD301V is a gain-guided, high-power laser
MOCVD: Metal Organic Chemical Vapor Deposition
Recommended power output
GaAlAs double-hetero-type laser diode
MTTF 10,000H (effective value) at Po = 90mW, Tc = 25°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
100mW High Power Laser Diode
Pomax
V
Tstg
R
LD
PD
Po = 90mW
–10 to +50
–40 to +85
100
15
2
mW
°C
°C
V
V
– 1 –
Pin Configuration
Bottom View
2
SLD301V
3
M-248
1
1. LD cathode
2. PD anode
3. COMMON
E88057I19-PS

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SLD301V Summary of contents

Page 1

... High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Applications • Solid state laser excitation • Medical use ...

Page 2

... Full Width at Half Maximum 1 Wavelength Selection Classification Type Wavelength (nm) SLD301V-1 785 ± 15 SLD301V-2 810 ± 10 SLD301V-3 830 ± 10 Type Wavelength (nm) SLD301V-21 798 ± 3 SLD301V-24 807 ± 3 SLD301V-25 810 ± 3 Min. Symbol Conditions Ith Iop P = 90mW O Vop P = 90mW 90mW ...

Page 3

... – 0.05 Imon – Monitor current [mA] Power dependence of far field pattern (parallel to junction 90mW 60mW 30mW O –30 –20 – Angle [degree – Case temperature [ C] SLD301V = 90mW 50 ...

Page 4

... Differential efficiency vs. Temperature characteristics 1.5 1.0 0.5 0 – – Case temperature [ – 4 – Power dependence of polarization ratio 100 Po – Optical power output [mW] SLD301V 120 ...

Page 5

... Power dependence of wavelength (Spectrum) 800 805 Wavelength [nm] 800 805 Wavelength [nm] 800 805 Wavelength [nm 20mW 810 800 60mW 810 800 100mW 810 – 5 – SLD301V 40mW 805 810 Wavelength [nm 80mW 805 810 Wavelength [nm] ...

Page 6

... Temperature dependence of wavelength (Po = 90mW) 805 815 Wavelength [nm] 805 815 Wavelength [nm] 805 815 Wavelength [nm –6 C 825 805 825 805 825 – 6 – SLD301V 815 825 Wavelength [nm 815 825 Wavelength [nm] ...

Page 7

... LASER DIODE AVOID EXPOSURE Laser radiation is OVER 1 W emitted from this 600 - 950 nm aperture. – 7 – SLD301V LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 Sony Corporation 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan ...

Page 8

... Package Outline Unit: mm Optical Distance = 2.55 ± 0.05 SONY CODE EIAJ CODE JEDEC CODE M-248 (LO-11) Reference Slot 1 Photo Diode 0 9.0 – 0.015 7.7 MAX 6.9 MAX Window Glass 3.5 Reference Plane LD Chip 3 – 0.45 PCD 2.54 PACKAGE MASS M-248 – 8 – SLD301V 1.2g Sony Corporation ...

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