SLD304XT Sony Electronics, SLD304XT Datasheet

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SLD304XT

Manufacturer Part Number
SLD304XT
Description
1000mw High Power Laser Diode
Manufacturer
Sony Electronics
Datasheet
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
Description
electric design.
cooler.
Features
• High power
• Low operating current
• Flat Package with built-in photodiode, TE cooler and thermistor
Applications
• Solid state laser excitation
• Medical use
Structure
Operating Lifetime
Absolute Maximum Ratings (Tth = 25°C)
• Optical power output
• Reverse voltage
• Operating temperature
• Storage temperature
The SLD304XT allows independent thermal and
This laser diode has a built-in TE (Thermo Electric)
Recommended optical power output Po = 900mW
AlGaAs double-hetero-type laser diode
MTTF 10,000H (effective value) at Po = 900mW, Tth = 25°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
1000mW High Power Laser Diode
Pomax
V
Topr
Tstg
R
LD
PD
–10 to +30
–40 to +85
1000
15
– 1 –
2
mW
°C
°C
V
V
SLD304XT
Pin Configuration (Top View)
Equivalent Circuit
No.
1
2
3
4
5
6
7
8
1
2
M-273
TE cooler (negative)
Thermistor lead 1
Thermistor lead 2
Laser diode (anode)
Laser diode (cathode)
Photodiode (cathode)
Photodiode (anode)
TE cooler (positive)
T
1
H
3
N
TE Cooler
4
Function
LD
5
P
8
6
E88066D19-PS
PD
7
8

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SLD304XT Summary of contents

Page 1

... High Power Laser Diode Description The SLD304XT allows independent thermal and electric design. This laser diode has a built-in TE (Thermo Electric) cooler. Features • High power Recommended optical power output Po = 900mW • Low operating current • Flat Package with built-in photodiode, TE cooler and thermistor Applications • ...

Page 2

... Thermistor resistance Wavelength Selection Classification Type Wavelength (nm) SLD304XT-1 785 ± 15 SLD304XT-2 810 ± 10 SLD304XT-3 830 ± 10 Type Wavelength (nm) SLD304XT-21 798 ± 3 SLD304XT-24 807 ± 3 SLD304XT-25 810 ± 3 (Tth: Thermistor temperature, Tth = 25°C) Min. Symbol Conditions Ith Iop P = 900mW O Vop P = 900mW ...

Page 3

... O 600mW 810 400mW 800 200mW 790 780 –10 0 Tth – Thermistor temperature [ C] – 3 – SLD304XT Tth = 25 C Tth = 15 C Tth = 0 C Tth = –10 C Tth = 30 C 0.5 1 Imon – Monitor current [mA] (parallel to junction) Tth = 900mW 800mW 600mW ...

Page 4

... Differential efficiency vs. Temperature characteristics 1.0 0.5 0 – Tth – Thermistor temperature [ C] Power dependence of polarization ratio 400 300 200 100 – 4 – SLD304XT Tth = 25 C 200 400 600 800 Po – Optical power output [mW] 1000 ...

Page 5

... Power dependence of wavelength 800 805 Wavelength [nm] 800 805 Wavelength [nm] 800 805 Wavelength [nm] Tth = 200mW 810 800 Tth = 600mW 810 800 Tth = 900mW 810 – 5 – SLD304XT Tth = 400mW 805 810 Wavelength [nm] Tth = 800mW 805 810 Wavelength [nm] ...

Page 6

... Temperature dependence of wavelength (Po = 900mW) 795 805 Wavelength [nm] 795 805 Wavelength [nm] 795 805 Wavelength [nm] Tth = –5 C 815 795 Tth = 5 C 815 795 Tth = 15 C 815 795 – 6 – SLD304XT Tth = 0 C 805 815 Wavelength [nm] Tth = 10 C 805 815 Wavelength [nm] Tth = 20 C 805 815 Wavelength [nm] ...

Page 7

... Tth – Thermistor temperature [ C] Tth = 25 C 815 795 0. 100 0 – 7 – SLD304XT Tth = 30 C 805 Wavelength [nm] TE cooler characteristics 2.0A 1.5A 1.0A 2.0A 50 100 T – Temperature difference [ C] 815 ...

Page 8

... LASER DIODE AVOID EXPOSURE Laser radiation is OVER 1 W emitted from this 600 - 950 nm aperture. – 8 – SLD304XT LASER DIODE This product complies with 21 CFR Part 1040.10 and 1040.11 Sony Corporation 6-7-35 Kitashinagawa, Shinagawa-ku,Tokyo 141-0001 Japan ...

Page 9

... Package Outline Unit – 3.0 4 – R1.2 Reference Plane SONY CODE EIAJ CODE JEDEC CODE M-273 (LO-10) + 0.05 0 33.0 0.05 Window 5.0 Glass 0.3 38.0 0.5 LD Chip 19.0 28.0 0.5 16.5 Distance between pilot hole and emittng area PACKAGE STRUCTURE M-273(LO-10) PACKAGE MASS – 9 – 8 – 0.6 2.54 0.1 43g Sony Corporation SLD304XT ...

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