NE85002 Renesas Electronics Corporation., NE85002 Datasheet

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NE85002

Manufacturer Part Number
NE85002
Description
2 W C-band Power Gaas Fet N-channel Gaas Mes Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. P10969EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
DESCRIPTION
partially matched devices. Each packaged device has an input lumped element matching network.
has a PHS. (Plated Heat Sink)
FEATURES
• Class A operation
• High power output
• High reliability
SELECTION CHART
NE8500200(*)
NE8500200-WB(*)
NE8500200-RG(*)
NE8500295-4
NE8500295-6
NE8500295-8
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W
NE8500200 is the six-cells recessed gate chip used in ‘95’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
*
** Specified at the condition at the last page.
PART NUMBER
GB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,
Pout (**)
33.8 min
33.8 min
33.8 min
33.5 min
(dBm)
PRELIMINARY DATA SHEET
PERFORMANCE SPECIFIED
2 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
110
100
100
90
10.5 min
8.0 min
9.5 min
8.0 min
G
(dB)
L
(**)
FREQUENCY
100
100
3.5 to 5.5
5.5 to 7.5
7.5 to 8.5
USABLE
2.0 to 10
(GHz)
NE85002 SERIES
2.1 ±0.15
240
SOURCE
PACKAGE CODE-95 (unit: mm)
1800
0.1
0.2 MAX.
2.5 ±0.3 DIA
NE8500200 (CHIP) (unit:
PHYSICAL DIMENSIONS
18.5 MAX.
14.0 ±0.3
7.2 ±0.2
DRAIN
GATE
0.7 ±0.1
GaAs MES FET
4.0 MIN.
©
1.0
4.5 MAX.
5.9 ±0.2
640
m)
1996

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NE85002 Summary of contents

Page 1

... PRELIMINARY DATA SHEET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC’ ...

Page 2

... A MIN. TYP. MAX. UNIT 950 – 1900 mA –3.0 – –1.0 V – 600 – mS – ˚C/W NE85002 SERIES ˚ C ˚ ˚C C TEST CONDITIONS Vds = 2.5 V, Vgs = 0 V Vds = 2.5 V, Ids = 8 mA Vds = 2.5 V, Ids = Idss ...

Page 3

... L * Test frequencies are: NE8500200 @8.5 GHz, NE8500295-4 @4.2 GHz, NE8500295-6 @6.5 GHz, NE8500295-8 @8.5 GHz ** Test input power are: NE8500200 @27.0 dBm, NE8500295-4 @24.5 dBm, NE8500295-6 @25.5 dBm, NE8500295-8 @27.0dBm *** The conditions are the same as the above except this. TYPICAL PERFORMANCE CURVE (T POWER DERATING CURVE ...

Page 4

... NE85002 SERIES S 22 MAG ANG 0.373 –169.5 0.463 –171.2 0.485 –179.3 0.512 177.7 0.532 173.9 0.556 172.7 0.578 170.5 0.605 168.0 0.607 167.3 ...

Page 5

... NE85002 SERIES S 22 MAG ANG 0.427 –155.9 0.464 –172.3 0.492 –178.9 0.513 177.4 0.534 173.3 0.573 169.5 0.592 168.1 0.603 165.7 0.603 165.0 0.601 164 ...

Page 6

... The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. 6 NE85002 SERIES ...

Page 7

... NE85002 SERIES 7 ...

Page 8

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 NE85002 SERIES M4 94.11 ...

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