PBSS301PZ

Manufacturer Part NumberPBSS301PZ
DescriptionPbss301pz 12 V, 5.7 A Pnp Low Vcesat Biss Transistor
ManufacturerNXP Semiconductors
PBSS301PZ datasheet
 
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PBSS301PZ
12 V, 5.7 A PNP low V
Rev. 01 — 7 September 2006
1. Product profile
1.1 General description
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS301NZ.
1.2 Features
I
Low collector-emitter saturation voltage V
I
High collector current capability I
I
High collector current gain (h
I
High efficiency due to less heat generation
I
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I
DC-to-DC conversion
I
MOSFET gate driving
I
Motor control
I
Charging circuits
I
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol Parameter
V
CEO
I
C
I
CM
R
CEsat
[1]
Pulse test: t
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
CEsat
and I
C
) at high I
FE
Quick reference data
Conditions
collector-emitter voltage
open base
collector current
peak collector current
single pulse;
t
1 ms
p
collector-emitter
I
= 4 A;
C
saturation resistance
I
= 200 mA
B
300 s;
0.02.
p
(BISS) transistor
Product data sheet
CEsat
CM
C
Min
Typ
-
-
-
-
-
-
[1]
-
32.5
Max
Unit
12
V
5.7
A
11.4
A
45
m

PBSS301PZ Summary of contents

  • Page 1

    ... PBSS301PZ 12 V, 5.7 A PNP low V Rev. 01 — 7 September 2006 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301NZ. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High efficiency due to less heat generation ...

  • Page 2

    ... Package Name Description SC-73 plastic surface-mounted package with increased heat sink; 4 leads Marking codes Marking code S301PZ Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V (BISS) transistor CEsat Simplified outline Symbol © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

  • Page 3

    ... T amb junction temperature ambient temperature storage temperature O , standard footprint 2.5 P tot (W) (1) 2.0 (2) 1.5 1.0 (3) 0 standard footprint 2 3 Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V (BISS) transistor CEsat Min Max - - - - - [ 0.7 [2] - 1.7 [ 150 65 +150 65 +150 006aaa560 75 125 ...

  • Page 4

    ... Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS301PZ_1 Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat Conditions Min Typ [1] in free air - - [ [ ...

  • Page 5

    ... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS301PZ_1 Product data sheet Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V (BISS) transistor CEsat 006aaa562 006aaa563 © ...

  • Page 6

    ... A Boff turn-on time storage time fall time turn-off time transition frequency 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat Min Typ = [1] = 0.5 A 250 ...

  • Page 7

    ... I (mA) C Fig 6. Collector current as a function of 006aaa589 V BEsat (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat (A) IB (mA amb collector-emitter voltage ...

  • Page 8

    ... I (2) I (3) I Fig 10. Collector-emitter saturation voltage as a 006aaa593 R CEsat ( ) (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat 1 ( ( amb ...

  • Page 9

    ... Fig 14. Test circuit for switching times PBSS301PZ_1 Product data sheet (probe) oscilloscope 450 12 0. Bon Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope ...

  • Page 10

    ... For further information and the availability of packing methods, see PBSS301PZ_1 Product data sheet 6.7 6.3 3.1 2.9 7.3 3.7 6.7 3.3 1 2.3 4.6 Dimensions in mm Packing methods Package Description SOT223 8 mm pitch tape and reel Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V (BISS) transistor CEsat 1.8 1.5 4 1.1 0 0.8 0.32 0.6 0.22 04-11-10 [1] Packing quantity 1000 -115 Section 14. © ...

  • Page 11

    ... Fig 16. Reflow soldering footprint SOT223 (SC-73) Fig 17. Wave soldering footprint SOT223 (SC-73) PBSS301PZ_1 Product data sheet 1. 7.40 1 solder lands occupied area solder paste solder resist 1 1. transport direction during soldering solder lands occupied area Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat 7.00 3.85 3.60 3.50 0.30 4 4.80 3. 5.90 6.15 Dimensions ...

  • Page 12

    ... Table 9. Revision history Document ID Release date PBSS301PZ_1 20060907 PBSS301PZ_1 Product data sheet 12 V, 5.7 A PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 7 September 2006 PBSS301PZ (BISS) transistor CEsat Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

  • Page 13

    ... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

  • Page 14

    ... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. (BISS) transistor CEsat All rights reserved. Date of release: 7 September 2006 Document identifier: PBSS301PZ_1 ...