PBSS301PZ NXP Semiconductors, PBSS301PZ Datasheet
PBSS301PZ
Related parts for PBSS301PZ
PBSS301PZ Summary of contents
Page 1
... PBSS301PZ 12 V, 5.7 A PNP low V Rev. 01 — 7 September 2006 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301NZ. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High efficiency due to less heat generation ...
Page 2
... Package Name Description SC-73 plastic surface-mounted package with increased heat sink; 4 leads Marking codes Marking code S301PZ Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V (BISS) transistor CEsat Simplified outline Symbol © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
Page 3
... T amb junction temperature ambient temperature storage temperature O , standard footprint 2.5 P tot (W) (1) 2.0 (2) 1.5 1.0 (3) 0 standard footprint 2 3 Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V (BISS) transistor CEsat Min Max - - - - - [ 0.7 [2] - 1.7 [ 150 65 +150 65 +150 006aaa560 75 125 ...
Page 4
... Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS301PZ_1 Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat Conditions Min Typ [1] in free air - - [ [ ...
Page 5
... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS301PZ_1 Product data sheet Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V (BISS) transistor CEsat 006aaa562 006aaa563 © ...
Page 6
... A Boff turn-on time storage time fall time turn-off time transition frequency 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat Min Typ = [1] = 0.5 A 250 ...
Page 7
... I (mA) C Fig 6. Collector current as a function of 006aaa589 V BEsat (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat (A) IB (mA amb collector-emitter voltage ...
Page 8
... I (2) I (3) I Fig 10. Collector-emitter saturation voltage as a 006aaa593 R CEsat ( ) (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat 1 ( ( amb ...
Page 9
... Fig 14. Test circuit for switching times PBSS301PZ_1 Product data sheet (probe) oscilloscope 450 12 0. Bon Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope ...
Page 10
... For further information and the availability of packing methods, see PBSS301PZ_1 Product data sheet 6.7 6.3 3.1 2.9 7.3 3.7 6.7 3.3 1 2.3 4.6 Dimensions in mm Packing methods Package Description SOT223 8 mm pitch tape and reel Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V (BISS) transistor CEsat 1.8 1.5 4 1.1 0 0.8 0.32 0.6 0.22 04-11-10 [1] Packing quantity 1000 -115 Section 14. © ...
Page 11
... Fig 16. Reflow soldering footprint SOT223 (SC-73) Fig 17. Wave soldering footprint SOT223 (SC-73) PBSS301PZ_1 Product data sheet 1. 7.40 1 solder lands occupied area solder paste solder resist 1 1. transport direction during soldering solder lands occupied area Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V CEsat 7.00 3.85 3.60 3.50 0.30 4 4.80 3. 5.90 6.15 Dimensions ...
Page 12
... Table 9. Revision history Document ID Release date PBSS301PZ_1 20060907 PBSS301PZ_1 Product data sheet 12 V, 5.7 A PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 7 September 2006 PBSS301PZ (BISS) transistor CEsat Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
Page 13
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 7 September 2006 PBSS301PZ 12 V, 5.7 A PNP low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
Page 14
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. (BISS) transistor CEsat All rights reserved. Date of release: 7 September 2006 Document identifier: PBSS301PZ_1 ...