PBSS302ND NXP Semiconductors, PBSS302ND Datasheet - Page 9

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PBSS302ND

Manufacturer Part Number
PBSS302ND
Description
Pbss302nd 40 V, 4 A Npn Low Vcesat Biss Transistor
Manufacturer
NXP Semiconductors
Datasheet

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8. Test information
PBSS302ND_2
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
V
CC
= 10 V; I
oscilloscope
t
d
C
t
= 2 A; I
on
Rev. 02 — 18 February 2008
V
t
I
r
Bon
(probe)
450
= 0.1 A; I
R1
R2
Boff
R
= 0.1 A
B
V
BB
40 V, 4 A NPN low V
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450
I
t
(100 %)
Boff
s
t
off
PBSS302ND
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2008. All rights reserved.
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
t
9 of 14

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