PBSS302NX NXP Semiconductors, PBSS302NX Datasheet

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PBSS302NX

Manufacturer Part Number
PBSS302NX
Description
Pbss302nx 20 V, 5.3 A Npn Low Vcesat Biss Transistor
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PX.
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS302NX
20 V, 5.3 A NPN low V
Rev. 01 — 24 August 2006
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
Breakthrough In Small Signal (BISS) transistor in a SOT89
300 s;
0.02.
FE
CEsat
Conditions
open base
single pulse;
t
I
I
) at high I
p
C
B
C
= 200 mA
= 4 A;
and I
1 ms
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
28
Product data sheet
Max
20
5.3
10.6
40
Unit
V
A
A
m

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PBSS302NX Summary of contents

Page 1

... PBSS302NX 20 V, 5.3 A NPN low V Rev. 01 — 24 August 2006 1. Product profile 1.1 General description NPN low V (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PX. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High effi ...

Page 2

... Package Name Description SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads Marking codes Marking code *5C Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat Simplified outline Symbol [1] © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 3

... T amb junction temperature ambient temperature storage temperature O , standard footprint 2.5 P tot (W) (1) 2.0 (2) 1.5 1.0 (3) 0 standard footprint 2 3 Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat Min Max - 5.3 - 10.6 [ 0.6 [2] - 1.65 [3] - 2.1 - 150 65 +150 65 +150 ...

Page 4

... Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302NX_1 Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat Conditions Min Typ [1] in free air - - [ [ ...

Page 5

... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302NX_1 Product data sheet Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat 006aaa558 006aaa559 © ...

Page 6

... A Boff turn-on time storage time fall time turn-off time transition frequency 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat Min Typ = [1] = 0.5 A 300 ...

Page 7

... C Fig 6. Collector current as a function of 006aaa573 V BEsat ( (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat 14 IB (mA amb collector-emitter voltage; typical values 1 ...

Page 8

... Fig 10. Collector-emitter saturation voltage as a 006aaa577 10 R CEsat ( ) 10 (1) ( (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat 1 1 (1) 2 (2) ( amb /I = 100 ...

Page 9

... Fig 14. Test circuit for switching times PBSS302NX_1 Product data sheet (probe) oscilloscope 450 12 0. Bon Boff Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 ...

Page 10

... For further information and the availability of packing methods, see PBSS302NX_1 Product data sheet 4.6 4.4 1.8 1.4 2.6 2 0.53 0.40 1.5 3 Dimensions in mm Packing methods Package Description SOT89 8 mm pitch tape and reel Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat 1.6 1.4 4.25 3.75 1.2 0.8 3 0.48 0.44 0.35 0.23 04-08-03 [1] Packing quantity 1000 -115 Section 15. ...

Page 11

... Dimensions in mm 6.60 2. 1.50 0.70 5.30 Dimensions in mm Not recommended for wave soldering Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat 1.70 4.85 0.50 1.20 1 msa442 0.60 (3x) 0.70 (3x) solder lands solder resist occupied area 3.50 7.60 0.50 1.20 3.00 transport direction during soldering © Koninklijke Philips Electronics N.V. 2006. All rights reserved. (BISS) transistor ...

Page 12

... PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm ceramic PCB standard 2 3 footprint SOT89 (SC-62) Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat 2 0.5 mm 3.96 mm 1.6 mm 001aaa235 PCB thickness = 1.6 mm Fig 19. FR4 PCB, mounting pad for ...

Page 13

... Table 9. Revision history Document ID Release date PBSS302NX_1 20060824 PBSS302NX_1 Product data sheet 20 V, 5.3 A NPN low V Data sheet status Change notice Product data sheet - Rev. 01 — 24 August 2006 PBSS302NX (BISS) transistor CEsat Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. (BISS) transistor CEsat All rights reserved. Date of release: 24 August 2006 Document identifier: PBSS302NX_1 ...

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