PBSS302NX NXP Semiconductors, PBSS302NX Datasheet
PBSS302NX
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PBSS302NX Summary of contents
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... PBSS302NX 20 V, 5.3 A NPN low V Rev. 01 — 24 August 2006 1. Product profile 1.1 General description NPN low V (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PX. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High effi ...
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... Package Name Description SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads Marking codes Marking code *5C Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat Simplified outline Symbol [1] © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
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... T amb junction temperature ambient temperature storage temperature O , standard footprint 2.5 P tot (W) (1) 2.0 (2) 1.5 1.0 (3) 0 standard footprint 2 3 Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat Min Max - 5.3 - 10.6 [ 0.6 [2] - 1.65 [3] - 2.1 - 150 65 +150 65 +150 ...
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... Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302NX_1 Product data sheet Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat Conditions Min Typ [1] in free air - - [ [ ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS302NX_1 Product data sheet Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat 006aaa558 006aaa559 © ...
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... A Boff turn-on time storage time fall time turn-off time transition frequency 100 MHz collector capacitance MHz 300 s; 0.02. p Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat Min Typ = [1] = 0.5 A 300 ...
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... C Fig 6. Collector current as a function of 006aaa573 V BEsat ( (mA) C (1) T (2) T (3) T Fig 8. Base-emitter saturation voltage as a function of Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat 14 IB (mA amb collector-emitter voltage; typical values 1 ...
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... Fig 10. Collector-emitter saturation voltage as a 006aaa577 10 R CEsat ( ) 10 (1) ( (mA) C (1) I (2) I (3) I Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat 1 1 (1) 2 (2) ( amb /I = 100 ...
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... Fig 14. Test circuit for switching times PBSS302NX_1 Product data sheet (probe) oscilloscope 450 12 0. Bon Boff Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat I (100 %) Bon I Boff off (probe) o oscilloscope 450 ...
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... For further information and the availability of packing methods, see PBSS302NX_1 Product data sheet 4.6 4.4 1.8 1.4 2.6 2 0.53 0.40 1.5 3 Dimensions in mm Packing methods Package Description SOT89 8 mm pitch tape and reel Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat 1.6 1.4 4.25 3.75 1.2 0.8 3 0.48 0.44 0.35 0.23 04-08-03 [1] Packing quantity 1000 -115 Section 15. ...
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... Dimensions in mm 6.60 2. 1.50 0.70 5.30 Dimensions in mm Not recommended for wave soldering Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V CEsat 1.70 4.85 0.50 1.20 1 msa442 0.60 (3x) 0.70 (3x) solder lands solder resist occupied area 3.50 7.60 0.50 1.20 3.00 transport direction during soldering © Koninklijke Philips Electronics N.V. 2006. All rights reserved. (BISS) transistor ...
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... PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm ceramic PCB standard 2 3 footprint SOT89 (SC-62) Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat 2 0.5 mm 3.96 mm 1.6 mm 001aaa235 PCB thickness = 1.6 mm Fig 19. FR4 PCB, mounting pad for ...
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... Table 9. Revision history Document ID Release date PBSS302NX_1 20060824 PBSS302NX_1 Product data sheet 20 V, 5.3 A NPN low V Data sheet status Change notice Product data sheet - Rev. 01 — 24 August 2006 PBSS302NX (BISS) transistor CEsat Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 24 August 2006 PBSS302NX 20 V, 5.3 A NPN low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. (BISS) transistor CEsat All rights reserved. Date of release: 24 August 2006 Document identifier: PBSS302NX_1 ...