PBSS302NX NXP Semiconductors, PBSS302NX Datasheet - Page 4

• Manufacturer Part Number: PBSS302NX
• Description: Pbss302nx 20 V, 5.3 A Npn Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Thermal characteristics
PBSS302NX_1
Product data sheet
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
5
0.02
0.01
0.50
0.20
0.10
0.05
= 1
0
0.33
0.75
10
4
Table 6.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
10
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
3
10
Rev. 01 — 24 August 2006
2
10
1
2
O
3
, standard footprint.
Conditions
in free air
20 V, 5.3 A NPN low V
1
10
[1]
[2]
[3]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
PBSS302NX
CEsat
10
Typ
-
-
-
-
2
(BISS) transistor
t
p
006aaa557
(s)
Max
208
76
60
20
10
3
2
.
Unit
K/W
K/W
K/W
K/W
4 of 15