PBSS302NX NXP Semiconductors, PBSS302NX Datasheet - Page 6

• Manufacturer Part Number: PBSS302NX
• Description: Pbss302nx 20 V, 5.3 A Npn Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Characteristics
PBSS302NX_1
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
Characteristics
p
300 s;
Rev. 01 — 24 August 2006
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4 A; I
= 5.3 A; I
= 4 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= 0.15 A
= 5 V; I
= 20 V; I
= 20 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 12.5 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
B
B
B
C
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 40 mA
= 200 mA
= 40 mA
= 100 mA
= 400 mA
C
C
C
C
C
B
B
C
E
E
E
C
= 0 A
= 50 mA
= 265 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
= i
20 V, 5.3 A NPN low V
= 0 A
= 0 A;
= 0.1 A;
C
= 3 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
300
300
250
200
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
PBSS302NX
CEsat
Typ
-
-
-
570
550
520
450
380
20
35
50
70
110
100
140
140
28
35
0.82
0.92
0.75
15
40
55
270
85
355
140
95
(BISS) transistor
Max
100
50
100
-
-
-
-
-
25
50
70
100
160
140
220
200
40
55
0.9
1.05
0.85
-
-
-
-
-
-
-
150
Unit
nA
nA
mV
mV
mV
mV
mV
mV
mV
mV
m
m
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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A