PBSS302PD NXP Semiconductors, PBSS302PD Datasheet - Page 6

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PBSS302PD

Manufacturer Part Number
PBSS302PD
Description
40 V Pnp Low Vcesat Biss Transistor
Manufacturer
NXP Semiconductors
Datasheet

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7. Characteristics
PBSS302PD_2
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
Characteristics
p
300 s;
Rev. 02 — 6 December 2007
0.02.
Conditions
V
V
T
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
I
I
C
C
C
C
C
C
C
C
C
C
Bon
Boff
C
E
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= i
= 0.5 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 6 A; I
= 6 A; I
= 0.5 A; I
= 1 A; I
= 1 A; I
= 4 A; I
= 0.1 A; f = 100 MHz
= 0.1 A;
= 0.1 A
= 5 V; I
= 30 V; I
= 30 V; I
= 30 V; V
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V;
= 10 V;
e
= 0 A; f = 1 MHz
B
B
B
B
B
B
B
B
C
= 50 mA
= 200 mA
= 400 mA
= 600 mA
= 600 mA
= 50 mA
= 100 mA
= 400 mA
C
C
C
C
C
B
B
C
E
E
C
= 0 A
= 50 mA
= 50 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
BE
= 0 A
= 0 A;
= 2 A;
40 V, 4 A PNP low V
= 0 V
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
200
200
175
80
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS302PD
CEsat
Typ
-
-
-
-
-
-
-
-
-
55
12
43
55
241
80
321
110
50
46
70
120
220
320
0.8
0.84
0.84
1.0
0.8
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
Max
-
-
-
-
-
75
-
-
-
-
-
-
-
-
0.1
50
0.1
0.1
60
110
180
300
450
0.85
0.9
1
1.1
1.0
Unit
mV
mV
mV
mV
mV
m
V
V
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
A
A
A
A
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