EMH1401 Sanyo Semiconductor Corporation, EMH1401 Datasheet

EMH1401

Manufacturer Part Number

EMH1401

Description

N-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.EMH1401.pdf (4 pages)

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Ordering number : EN8722

EMH1401

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : KA

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

•

Low ON-resistance.

1.8V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V GSS

V DSS

t d (on)

t d (off)

I GSS

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

yfs

I D

t r

t f

PW 10 s, duty cycle 1%

Mounted on a ceramic board (1200mm

I D =1mA, V GS =0V

V DS =20V, V GS =0V

V GS = 8V, V DS =0V

V DS =10V, I D =1mA

V DS =10V, I D =3A

I D =3A, V GS =4V

I D =1.5A, V GS =2.5V

I D =0.5A, V GS =1.8V

V DS =10V, f=1MHz

See specified Test Circuit.

EMH1401

Conditions

0.8mm)

D2005PE MS IM TB-00001825

min

0.4

5.5

Ratings

typ

1060

Ratings

16.5

195

175

110

9.2

Continued on next page.

--55 to +150

max

150

1.5

1.3

No.8722-1/4

Unit

Related parts for EMH1401

EMH1401 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN EMH1401 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... 0.1 0.2 0.3 0.4 0.5 0.6 Drain-to-Source Voltage EMH1401 Symbol Conditions =10V =4V =6A Qgs V DS =10V =4V =6A Qgd V DS =10V =4V = =6A =0V Electrical Connection 0.125 V OUT ...

Page 3

... Drain Current 4 =10V I D =6A 3.5 3.0 2.5 2.0 1.5 1.0 0 Total Gate Charge EMH1401 70 Ta= --60 --40 IT10458 = 0.3 10 ...

Page 4

... Ambient Temperature Note on usage : Since the EMH1401 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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