EMH2302 Sanyo Semiconductor Corporation, EMH2302 Datasheet

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EMH2302

Manufacturer Part Number
EMH2302
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : EN8726
EMH2302
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : MB
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,
thereby enabling high-density mounting.
4V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V DSS
V GSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Crss
Ciss
Tstg
I DP
Tch
P T
yfs
P D
I D
t r
t f
I D =--1mA, V GS =0V
V DS =- -30V, V GS =0V
V GS = 16V, V DS =0V
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -1A
I D =--1A, V GS =- -10V
I D =--0.5A, V GS =- -4V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
SANYO Semiconductors
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
Mounted on a ceramic board (900mm
EMH2302
Conditions
Conditions
2
2
0.8mm) 1unit
0.8mm)
92706PE MS IM TC-00000040
DATA SHEET
min
--1.2
--30
1.3
Ratings
P-channel
typ
15.5
25.5
215
285
115
2.2
8.4
65
52
29
Continued on next page.
--55 to +150
max
150
--2.6
--30
150
310
1.0
1.2
20
--2
--8
10
--1
No.8726-1/4
Unit
Unit
m
m
W
W
pF
pF
pF
ns
ns
ns
ns
V
V
A
A
V
V
S
C
C
A
A

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EMH2302 Summary of contents

Page 1

... Ordering number : EN8726 EMH2302 Features The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, • thereby enabling high-density mounting. 4V drive. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) ...

Page 2

... --15V --10V -- =15 D PW= EMH2302 P EMH2302 Symbol Conditions =--10V -10V =--2A Qgs V DS =--10V -10V =--2A Qgd V DS =--10V -10V =-- =--2A =0V Electrical Connection 8 0.125 1 V OUT ...

Page 3

... Drain Current Time -- 100 (on 1 --0.01 --0.1 Drain Current EMH2302 --3 --10V --2.5 --2.0 --1.5 --1.0 --0.5 0 --0.8 --0.9 --1.0 0 IT11523 450 Ta=25 C 400 350 300 250 200 150 100 50 0 --12 --14 --16 --60 --40 IT11525 --10V ...

Page 4

... Ambient Temperature Note on usage : Since the EMH2302 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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