EMH2601 Sanyo Semiconductor Corporation, EMH2601 Datasheet

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EMH2601

Manufacturer Part Number
EMH2601
Description
N-channel And P-channel Silicon Mosfets
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : EN8731
EMH2601
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : FA
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
ultrahigh-speed switching, thereby enabling high-density mounting.
1.8V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
V GS (off)
Symbol
Symbol
V GSS
V DSS
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P T
yfs
I D
P D
SANYO Semiconductors
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GS = 8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =1.5A
I D =1.5A, V GS =4V
I D =0.8A, V GS =2.5V
I D =0.3A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
Mounted on a ceramic board (900mm
EMH2601
Conditions
Conditions
2
2
0.8mm) 1unit
0.8mm)
DATA SHEET
71006PE MS IM TC-00000042
N-channel
min
0.4
2.4
20
--55 to +150
20
10
12
3
Ratings
150
1.0
1.2
typ
365
4.0
58
71
98
77
67
P-channel
Continued on next page.
max
- -20
150
10
--2
--8
1.3
10
76
99
1
No.8731-1/6
Unit
Unit
m
m
m
pF
pF
pF
W
W
V
V
A
A
V
V
S
C
C
A
A

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EMH2601 Summary of contents

Page 1

... Ordering number : EN8731 EMH2601 Features The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and • ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive. • Specifications Absolute Maximum Ratings at Ta=25 C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) ...

Page 2

... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : EMH8 EMH2601 Symbol Conditions t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =10V =4V =3A Qgs ...

Page 3

... --4V V OUT PW=10 s D.C. 1% EMH2601 P.G [Nch] --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.7 0.8 0.9 1.0 IT10403 [Nch] --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 1.5 2.0 IT10404 --10V -- = OUT G EMH2601 --1.5V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage --0.5 --1.0 --1.5 Gate-to-Source Voltage [Pch] --0.8 --0.9 --1.0 IT10538 [Pch --10V --2.0 --2.5 IT10539 No.8731-3/6 ...

Page 4

... Drain Current = 1 0 0.01 0.3 0.4 0.5 0.6 0.7 0.8 Diode Forward Voltage EMH2601 [Nch] 700 Ta=25 C 600 500 400 --0.3A 300 200 100 IT10405 [Nch] 500 400 300 200 100 0 100 120 140 160 --60 --40 ...

Page 5

... Operation in this 2 area is limited (on). 0 Ta= Single pulse 2 2 Mounted on a ceramic board (900mm 0.8mm) 1unit 0. 0.01 0.1 1.0 Drain-to-Source Voltage EMH2601 [Nch =10V 100 1.0 --0.01 IT10409 [Nch] ...

Page 6

... Ambient Temperature Note on usage : Since the EMH2601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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