EMH2602 Sanyo Semiconductor Corporation, EMH2602 Datasheet

EMH2602

Manufacturer Part Number

EMH2602

Description

N-channel And P-channel Silicon Mosfets

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.EMH2602.pdf (6 pages)

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Ordering number : EN8732A

EMH2602

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : FB

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

[N-channel]

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

ultrahigh-speed switching, thereby enabling high-density mounting.

4V drive.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device

Applications

V GSS

V DSS

I GSS

 yfs 

I DSS

Tstg

I DP

Tch

P T

I D

P D

SANYO Semiconductors

I D =1mA, V GS =0V

V DS =30V, V GS =0V

V GS =±16V, V DS =0V

V DS =10V, I D =1mA

V DS =10V, I D =2A

I D =2A, V GS =10V

I D =1A, V GS =4V

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm

EMH2602

Conditions

51607 TI IM TC-00000713 / O0406PA MS IM TC-00000044

Conditions

✕0.8mm) 1unit

✕0.8mm)

DATA SHEET

N-channel

min

1.2

1.5

--55 to +150

±20

3.5

Ratings

150

1.0

1.2

typ

105

2.6

P-channel

Continued on next page.

max

±20

- -30

±10

150

--2

--8

2.6

No.8732-1/6

Unit

mΩ

µA

°C

Related parts for EMH2602

EMH2602 Summary of contents

Page 1

... Ordering number : EN8732A EMH2602 Features The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and • ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive. • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) ...

Page 2

... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : EMH8 EMH2602 Symbol Conditions Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit. ...

Page 3

... --10V V OUT PW=10µs D.C.≤1% P.G [Nch] --2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0 =2.5V --0.4 --0.2 0 0.7 0.8 0.9 1.0 IT10596 [Nch] --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 2.5 3.0 3.5 4.0 IT10597 --15V -- =15Ω OUT G EMH2602 50Ω --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage --10V 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage [Pch] --0.8 --0.9 --1.0 IT11523 [Pch] --3.5 --4.0 IT11524 No.8732-3/6 ...

Page 4

... Drain Current 1 0 0.01 0.4 0.5 0.6 0.7 0.8 Diode Forward Voltage EMH2602 [Nch] 450 Ta=25 ° C 400 350 300 --0.5A 250 200 150 100 IT10598 [Nch] 450 400 350 300 250 200 150 100 ...

Page 5

... Operation in this area 2 is limited (on). 0 Ta=25 °C 3 Single pulse 2 ✕0.8mm) 1unit 2 Mounted on a ceramic board (900mm 0. 0 0.01 1.0 Drain-to-Source Voltage EMH2602 [Nch =15V =10V 2 100 1 --0.01 ...

Page 6

... Ambient Temperature °C Note on usage : Since the EMH2602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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