FMA80N10T2 Fuji Electric holdings CO.,Ltd, FMA80N10T2 Datasheet

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FMA80N10T2

Manufacturer Part Number
FMA80N10T2
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
DRAWN
CHECKED
CHECKED
Jun.-17-'05
Jun.-17-'05
Jun.-17-'05
DATE
NAME
Spec. No.
Date
Device Name
Type Name
SPECIFICATION
APPROVED
:
:
:
:
Jun.-17-2005
Power MOSFET
FMA80N10T2
MS5F6117
Fuji Electric Device Technology Co.,Ltd.
MS5F6117
1 / 19
H04-004-05
a

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FMA80N10T2 Summary of contents

Page 1

... SPECIFICATION Device Name Type Name Spec. No. Date NAME DATE APPROVED DRAWN Jun.-17-'05 CHECKED Jun.-17-'05 CHECKED Jun.-17-'05 Power MOSFET : FMA80N10T2 : MS5F6117 : Jun.-17-2005 : Fuji Electric Device Technology Co.,Ltd. MS5F6117 H04-004-05 ...

Page 2

Revised Records Date Classification Index May.-17 enactment 2005 Feb.-22 revise a 2006 Fuji Electric Device Technology Co.,Ltd. Content Drawn Checked Checked Approved Revised characteristics curve. A dded avalanche current. MS5F6117 a 2 ...

Page 3

... This specifies Fuji Power MOSFET FMA80N10T2 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-220F 5.Absolute Maximum Ratings at Tc=25  C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche current Repetitive ...

Page 4

Dynamic Ratings Description Symbol Forward Transconductance g fs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss td(on) Turn-On Time tr td(off) Turn-Off Time tf Q Total Gate Charge G Q Gate-Source Charge GS Q Gate-Drain Charge GD Reverse ...

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Fig.1 Test circuit Fig.2 Operating waveforms -15V 0 Fuji Electric Device Technology Co.,Ltd. L 50Ω D.U.T L=853uH Vcc=48V Single Pulse Test +10V IDP MS5F6117 Vcc DSS H04-004-03 ...

Page 6

All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104 standards. Test items required without fail Humidification treatment (85±2°C,65±5%RH,168±24hr) Heat treatment of soldering (Solder ...

Page 7

Test Test Testing methods and Conditions No. Items 1 High Temp. Temperature : 150+0/-5°C Storage Test duration : 1000hr 2 Low Temp. Temperature : -55+5/-0°C Storage Test duration : 1000hr 3 Temperature Temperature : 85±2°C Humidity Relative humidity : 85±5% ...

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Fuji Electric Device Technology Co.,Ltd. MS5F6117 H04-004-03 a ...

Page 9

Cautions ・ Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to ...

Page 10

Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M ) ・ When soldering, in order to protect the MOSFETs from static electricity, ground the ...

Page 11

Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may ...

Page 12

Typical Output Characteristics ID=f(VDS):80 140 10V 20V 120 6V 100 Fuji Electric Device Technology Co.,Ltd. Allowable Power Dissipation PD=f(Tc 100  ...

Page 13

Typical Transfer Characteristic ID=f(VGS):80 100 Typical Transconductance gfs=f(ID):80 100 10 1 0.1 0.1 Fuji Electric Device Technology Co.,Ltd.  s pulse test,VDS=25V,Tch= VGS[V]  s pulse test,VDS=25V,Tch= [A] MS5F6117 ...

Page 14

Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 0.04 VGS=4V 0.03 0.02 0.01 0. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=40A,VGS=10V 0.04 0.03 0.02 0.01 0.00 -50 -25 Fuji Electric Device Technology Co.,Ltd.  s pulse test,Tch=25 4. ...

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Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Typical Gate Charge Characteristics VGS=f(Qg):ID=80A,Tch= Fuji Electric Device Technology Co.,Ltd. ...

Page 16

Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 1000 100 10 1 0.1 0.0 Fuji Electric Device Technology Co.,Ltd. Typical Capacitance C=f(VDS):VGS=0V,f=1MHz VDS [V] ...

Page 17

Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG= Maximum Avalanche Energy vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 100 Fuji Electric Device Technology Co.,Ltd ...

Page 18

Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=80A 1000 800 I =32A AS 600 I =48A AS 400 I =80A AS 200 Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch= Single Pulse 1 ...

Page 19

Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D Fuji Electric Device Technology Co.,Ltd [sec] MS5F6117 - ...

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