FMA18N25G Fuji Electric holdings CO.,Ltd, FMA18N25G Datasheet

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... SPECIFICATION Device Name Type Name Spec. No. Date NAME DATE APPROVED DRAWN Oct.-27-'05 CHECKED Oct.-27-'05 CHECKED Oct.-27-'05 Power MOSFET : FMA18N25G : MS5F06392 : Octorber-27-2005 : Fuji Electric Device Technology Co.,Ltd. MS5F06392 H04-004-05 ...

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Revised Records Date Classification Index Oct-27 enactment 2005 Fuji Electric Device Technology Co.,Ltd. Content Drawn Checked Checked Approved MS5F06392 H04-004-03 ...

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... This specifies Fuji Power MOSFET FMA18N25G 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-220F 5.Absolute Maximum Ratings at Tc=25  C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-repetitive Maximum Avalanche Current Repetitive ...

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Dynamic Ratings Description Symbol Forward Transconductance g fs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss td(on) Turn-On Time tr td(off) Turn-Off Time tf Q Total Gate Charge G Q Gate-Source Charge GS Q Gate-Drain Charge GD Reverse ...

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Fig.1 Test circuit Fig.2 Operating waveforms -15V 0 Fuji Electric Device Technology Co.,Ltd. L 50Ω D.U.T +10V IDP MS5F06392 Vcc DSS H04-004-03 ...

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All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104 standards. Test items required without fail Humidification treatment (85±2°C,65±5%RH,168±24hr) Heat treatment of soldering (Solder ...

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Test Test Testing methods and Conditions No. Items 1 High Temp. Temperature : 150+0/-5°C Storage Test duration : 1000hr 2 Low Temp. Temperature : -55+ 5/-0°C Storage Test duration : 1000hr 3 Temperature Temperature : 85±2°C Humidity Relative humidity : ...

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Fuji Electric Device Technology Co.,Ltd. MS5F06392 H04-004-03 ...

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Cautions ･ Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to ...

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Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M ) ･ When soldering, in order to protect the MOSFETs from static electricity, ground the ...

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Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may ...

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Compliance with pertaining to restricted substances 11-1) Compliance with the RoHS Regulations and Exemptions This product will be fully compliant with the RoHS directive. Five out of six substances below which are regulated by the RoHS directive in Europe ...

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Typical Output Characteristics ID=f(VDS): Fuji Electric Device Technology Co.,Ltd. Allowable Power Dissipation PD=f(Tc 100   s ...

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Typical Transfer Characteristic ID=f(VGS): 0 Typical Transconductance gfs=f(ID): 0.1 0.1 Fuji Electric Device Technology Co.,Ltd.  s pulse test,VDS=25V,Tch= VGS[V]  s pulse test,VDS=25V,Tch= ...

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Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 0.40 VGS=5.5V 6.0V 0.35 0.30 0.25 0.20 0.15 0.10 5 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=9.0A,VGS=10V 0.5 0.4 0.3 0.2 0.1 0.0 -50 -25 Fuji Electric Device Technology Co.,Ltd.  s pulse test,Tch=25 7.0V 6. ...

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Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Typical Gate Charge Characteristics VGS=f(Qg):ID=18.0A,Tch= Fuji Electric Device ...

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Typical Forward Characteristics of Reverse Diode IF=f(VSD): 0.1 0.00 0.25 Fuji Electric Device Technology Co.,Ltd. Typical Capacitance C=f(VDS):VGS=0V,f=1MHz VDS [V]   s pulse ...

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Typical Switching Characteristics vs. ID t=f(ID):Vcc=150V,VGS=10V,RG= td(off) td(on Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=25V,I(AV)<=18.0A 400 I =8.0A AS 350 300 I =11.0A AS 250 200 I =18.0A AS ...

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Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch= Single Pulse Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D ...