DIM200WHS17-A000 Dynex Semiconductor, DIM200WHS17-A000 Datasheet
DIM200WHS17-A000
Related parts for DIM200WHS17-A000
DIM200WHS17-A000 Summary of contents
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... The DIM200WHS17-A000 is a half bridge 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM200WHS17-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... GE C case 1ms 200A 200A 125˚C F case V = 25V 0V 1MHz 125˚ 1000V – L*. di/ CE(max) CES 2 IEC 60747-9 DIM200WHS17-A000 Min. Typ. Max. Units - - 4.5 5.5 V 6.5 - 2.7 3 3.4 4 200 400 A - 2.2 2.5 ...
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... DIM200WHS17-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise case Symbol Parameter t Turn-off delay time d(off) t Fall time f E Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Gate charge g Q Diode reverse recovery charge rr I Diode reverse current ...
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... Conditions 125˚ 100A, C 120 V = 900V cc 100 off E rec (A) C Fig. 6 Typical switching energy vs gate resistance DIM200WHS17-A000 1 1.5 2 2.5 3 3.5 4 4.5 Collector-emitter voltage (V) ce Fig. 4 Typical output characteristics Gate resistance (Ohms 5 off E rec 10 5/8 ...
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... DIM200WHS17-A000 400 V is measured at power busbars F and not the auxiliary terminals 350 T 300 250 200 150 100 0.5 1.0 1.5 2.0 Foward voltage, V Fig. 7 Diode typical forward characteristics Fig. 9 Diode reverse bias safe operating area 6/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...
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... For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 7 6(G ) 1(E1C2) 2(E2) Nominal weight: 420g Module outline type code: W Fig. 11 Package details DIM200WHS17-A000 3(C1 5(E ) 7/8 ...
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... HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services ...